current mode amp powers 24 ghz

Posted on Feb 4, 2014

It is possible to apply switch-mode approaches to a silicon CMOS semiconductor process to fabricate a current-mode power amplifier with high gain and efficiency for use in 2. 4-GHz wireless applications. Amplification at 2. 4 GHz is necessary for a number of different wireless applications, and CMOS offers a low-cost and effective process for achieving respectable gain at that frequency. In support of

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wireless transmitters at 2. 4 GHz, a 2. 4-GHz CMOS current-mode power amplifier was developed for improved efficiency. It consists of two differential amplifier stages. The first stage is a driver evolved from current mirrors, while the second stage is a current-mode Class D amplifier. All components, including the inductors, are on the CMOS chip. Simulations performed with a commercial computer-aided-engineering (CAE) software package (from Cadence Design Systems ) indicate high power-added efficiency (PAE) of 40% with 0. 25-W saturated output power and high gain when operating at a 3. 3-VDC supply. The rapid growth of wireless devices and services has driven the need for practical solid-state devices, including amplifiers. Many applications are being served by single-chip radios. 1 Many of the RF front-end functions, such as the low-noise amplifier (LNA), frequency mixer, and voltage-controlled oscillator (VCO) serving as the radio`s local oscillator (LO) have been integrated onto a single chip using silicon CMOS processes. But some of the limitations of CMOS technology ”such as thermal dissipation, power efficiency, and supply voltage ”have prevented the integration of the power amplifier (PA) output stage. 2 Of course, the PA is a key part of a 2. 4-GHz wireless radio, supporting the transmitter section. PA performance can be judged by a number of parameters, including output power, gain, and efficiency, with one of...

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