L274

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L274 GaAs Infrared Emitting Diode – Technical Summary

Overview

The L274 is a high-performance GaAs (Gallium Arsenide) infrared (IR) emitting diode designed for applications requiring reliable and efficient infrared light emission. Fabricated using a liquid-phase epitaxy (LPE) process, this diode offers excellent optical performance, high reliability, and robust pulse handling capabilities. Its compact form factor and compatibility with standard packages make it suitable for integration into a variety of electronic systems, particularly in consumer and industrial remote control applications.

Key Features

• Extremely Narrow Half Angle: Provides precise directional infrared emission, enhancing efficiency in targeted applications.
• GaAs Infrared Emitting Diode: Fabricated using a liquid-phase epitaxy (LPE) process for high-quality performance.
• High Reliability: Engineered for long-term stability and consistent operation under varying conditions.
• High Pulse Handling Capability: Supports high-current pulsed operation, making it ideal for remote control signaling.
• Available in Grouped Configurations: Can be supplied in matched groups for uniformity in multi-diode applications.
• Compatible Package: Shares the same package as the SFH 484, ensuring easy substitution and design flexibility.

Applications

The L274 is optimized for use in infrared communication and control systems, including:

• Infrared Remote Controls: Widely used in hi-fi systems, television sets, and video equipment for reliable signal transmission.
• Consumer Electronics: Suitable for remote operation of home appliances, set-top boxes, and gaming consoles.
• Industrial Automation: Can be integrated into IR-based sensors and control systems for machinery and robotics.
• Security Systems: Used in IR illumination for surveillance cameras and motion detection systems.

Electrical Characteristics

The following table summarizes the key electrical and thermal parameters of the L274 diode:

• Operating and Storage Temperature Range (T_op, T_stg): –55°C to +100°C
• Junction Temperature (T_j): 100°C (maximum)
• Reverse Voltage (V_R): 5 V (maximum)
• Forward Current (I_F): 100 mA (maximum)

Optical Characteristics

The L274 is designed to emit infrared light with high efficiency. Key optical properties include:

• Peak Wavelength: Typically in the range of 940–950 nm, optimized for IR receiver compatibility.
• Radiant Intensity: High output intensity ensures reliable signal transmission over distances.
• Half Angle: Narrow emission angle for focused IR beam projection.

Package Information

The L274 is housed in a standard package that ensures mechanical stability and ease of assembly. Key package details include:

• Package Type: Compatible with the SFH 484 package, a widely used industry-standard form factor.
• Dimensions: Compact design suitable for surface-mount or through-hole PCB assembly.
• Lead Material: Tin-plated leads for reliable solderability and corrosion resistance.
• Lens Type: Clear or diffused lens options available depending on application requirements.

Reliability and Environmental Compliance

The L274 is designed to meet stringent reliability and environmental standards, including:

• ESD Protection: Robust against electrostatic discharge (ESD) events.
• Moisture Resistance: Compliant with industry standards for humidity tolerance.
• RoHS Compliance: Free from hazardous substances, adhering to environmental regulations.

Recommended Operating Conditions

To ensure optimal performance and longevity, the following operating conditions are recommended:

• Forward Current (Continuous): Operate within 50–80% of the maximum rated current (100 mA).
• Pulse Operation: Suitable for pulsed currents exceeding the continuous rating, provided duty cycle limits are observed.
• Thermal Management: Ensure adequate heat dissipation to maintain junction temperature below 100°C.

Handling and Storage Guidelines

Proper handling and storage are essential to maintain the diode's performance:

• ESD Precautions: Use anti-static measures during handling to prevent damage.
• Storage Temperature: Store in a dry environment within the specified temperature range (–55°C to +100°C).
• Soldering: Follow recommended reflow or wave soldering profiles to avoid thermal stress.

Conclusion

The L274 GaAs Infrared Emitting Diode is a high-reliability, high-performance component ideal for infrared remote control and signaling applications. Its narrow half angle, robust construction, and compatibility with standard packages make it a versatile choice for designers of consumer electronics, industrial systems, and security devices. By adhering to the recommended operating conditions and handling guidelines, users can maximize the diode's lifespan and performance in their applications.

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