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LD271

#LD271 #GaAs #infrared emitting diode #940nm #remote control #optical sensors #infrared communication #semiconductor

LD271 GaAs Infrared Emitting Diode Technical Summary

Overview

The LD271 is a high-performance GaAs (Gallium Arsenide) infrared emitting diode designed for applications requiring reliable infrared light emission. Fabricated using advanced semiconductor technology, this component offers excellent efficiency and stability across a wide operating temperature range. With its compact package and robust construction, the LD271 is suitable for both industrial and commercial applications where consistent infrared output is critical.

This diode emits light in the infrared spectrum, typically around 940nm wavelength, making it ideal for use in remote control systems, optical sensors, and other infrared-based communication devices. The device features low forward voltage and high output power, ensuring energy-efficient operation.

Key Features

Applications

The LD271 infrared emitting diode is suitable for a wide range of applications including:

Electrical Characteristics

The following table outlines the key electrical characteristics of the LD271 at 25°C unless otherwise specified:

Optical Characteristics

The LD271 offers excellent optical performance characteristics:

Thermal Characteristics

Package Information

The LD271 is available in a standard 3mm radial leaded package with the following dimensions:

Reliability Data

The LD271 has undergone extensive reliability testing with the following results:

Handling and Mounting Precautions

Design Considerations

When designing with the LD271, consider the following:

Environmental Compliance

Ordering Information

The LD271 is available in several packaging options:

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