27C1001

M27C1001 - 1 Mbit (128K x 8) UV Erasable Programmable Read-Only Memory (EPROM)

Overview

The M27C1001 is a high-performance 1 Mbit EPROM organized as 128K words of 8 bits each. This non-volatile memory device is designed for applications requiring reliable, long-term data storage. The M27C1001 features UV erasability, allowing the device to be reprogrammed after exposure to ultraviolet light. It operates on a single 5V power supply and is compatible with industry-standard EPROM pinouts, making it suitable for legacy system upgrades or new designs requiring EPROM technology.

Key Features

• Capacity: 1 Mbit (128K x 8 organization)
• Technology: UV erasable, electrically programmable
• Access Time: 45 ns, 55 ns, 70 ns, and 90 ns speed grades available
• Power Supply: Single 5V ±10% operation
• Low Power Consumption: 30 mA active current (typical), 100 μA standby current
• Programming Voltage: 12.75V (V_PP) for programming operations
• Reliability: Minimum 10,000 erase/program cycles
• Data Retention: 10 years minimum at 55°C
• Package Options: 32-pin PDIP, PLCC, and TSOP packages
• Compatibility: Pin-compatible with other 27C1001 EPROMs and 27C010 devices
• Temperature Range: Commercial (0°C to +70°C) and Industrial (-40°C to +85°C) options

Applications

The M27C1001 is suitable for a wide range of applications requiring non-volatile memory storage, including:

• Legacy computer systems and upgrades
• Industrial control systems
• Embedded system firmware storage
• Telecommunications equipment
• Automotive electronics (non-safety critical)
• Medical instrumentation
• Gaming and arcade machines
• Military and aerospace systems (with appropriate screening)
• Test and measurement equipment
• Consumer electronics requiring field upgrades

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (V_CC): -0.6V to +7.0V
• Programming Voltage (V_PP): -0.6V to +14.0V
• Input Voltage: -0.6V to V_CC + 0.6V
• Output Voltage: -0.6V to V_CC + 0.6V
• Storage Temperature: -65°C to +150°C
• Operating Temperature: See package options

DC Characteristics (V_CC = 5V ±10%, T_A = 25°C)

• Input Leakage Current (I_IL): ±10 μA max
• Output Leakage Current (I_OL): ±10 μA max
• V_IL (Input Low Voltage): 0.8V max
• V_IH (Input High Voltage): 2.0V min
• V_OL (Output Low Voltage): 0.45V max @ 2.1 mA
• V_OH (Output High Voltage): 2.4V min @ -400 μA
• Standby Current (I_SB): 100 μA max
• Active Current (I_CC): 30 mA typical, 50 mA max

AC Characteristics

• Address Access Time (t_AA): 45/55/70/90 ns (depending on speed grade)
• Chip Enable Access Time (t_ACE): 45/55/70/90 ns
• Output Enable Access Time (t_OE): 20 ns max
• Chip Enable to Output Float (t_DF): 20 ns max
• Output Hold Time (t_OH): 0 ns min
• Read Cycle Time (t_RC): 45/55/70/90 ns

Programming Characteristics

• Programming Voltage (V_PP): 12.75V ±0.25V
• Programming Pulse Width: 50 μs typical
• Programming Algorithm: Intelligent programming with verification
• Programming Temperature: 25°C ±5°C recommended
• Programming Current (I_PP): 30 mA typical

Package Information

32-Pin Plastic Dual In-Line Package (PDIP)

• Dimensions: 15.24mm x 6.48mm body, 2.54mm pitch
• Pin 1 Identifier: Notch on package end
• Lead Material: Alloy 42 or equivalent
• Lead Finish: Matte tin or solder dip

32-Pin Plastic Leaded Chip Carrier (PLCC)

• Dimensions: 13.97mm x 13.97mm body, 1.27mm pitch
• Pin 1 Identifier: Dot near pin 1 corner
• Lead Material: Copper alloy
• Lead Finish: Solder plated

32-Pin Thin Small Outline Package (TSOP)

• Dimensions: 20mm x 8mm body, 0.8mm pitch
• Pin 1 Identifier: Notch on package end
• Lead Material: Copper alloy
• Lead Finish: Matte tin

Erase Characteristics

• Erase Method: UV light at 253.7 nm wavelength
• Erase Energy: Minimum 15 W-sec/cm²
• Recommended Exposure: 15-20 minutes at 12,000 μW/cm² intensity
• Window Material: Fused silica with UV filter
• Window Transmission: >60% at 253.7 nm

Quality and