HM621400H 4-Mbit High-Speed Static RAM Technical Summary

Overview

The HM621400H is a high-performance 4-Mbit static RAM organized as 4,194,304 words × 1-bit. This SRAM component achieves high-speed operation through advanced CMOS process technology (4-transistor + 2-poly resistor memory cell) and optimized circuit design. The device is particularly suitable for applications requiring both high speed and high memory density, such as cache memory and buffer memory in computing systems. The component comes in a space-efficient 400-mil 32-pin SOJ package designed for high-density surface mounting applications.

Key Features

• Single Power Supply: 5.0 V ± 10% operation
• High-Speed Performance: Maximum access times of 10 ns, 12 ns, or 15 ns variants
• Fully Static Operation: No clock or timing strobe required
• Symmetric Timing: Equal access and cycle times
• TTL Compatibility: All inputs and outputs directly TTL compatible
• Power Efficiency:
  • Operating current: 200/180/160 mA (max)
  • TTL standby current: 70/60/50 mA (max)
  • CMOS standby current: 5 mA (max), 1.2 mA (max) for L-version
  • Data retention current: 0.8 mA (max) for L-version
• Low-Voltage Data Retention: 2 V (min) for L-version
• Optimized Pinout: Center VCC and VSS type pinout configuration

Applications

The HM621400H is designed for high-performance computing and memory-intensive applications including:

• Cache memory subsystems
• High-speed data buffers
• Network equipment memory
• Telecommunications systems
• Industrial control systems
• Embedded computing applications
• High-performance computing systems

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (VCC): -0.5 V to +7.0 V
• Input Voltage (VIN): -0.5 V to VCC + 0.5 V
• Operating Temperature Range: 0°C to +70°C
• Storage Temperature Range: -55°C to +125°C

Recommended Operating Conditions

• Supply Voltage (VCC): 4.5 V to 5.5 V
• Input High Voltage (VIH): 2.2 V min
• Input Low Voltage (VIL): 0.8 V max
• Operating Temperature: 0°C to +70°C

DC Characteristics

• Input Leakage Current (II): ±1 μA max
• Output Leakage Current (IOZ): ±1 μA max
• Output High Voltage (VOH): 2.4 V min (IOH = -2.1 mA)
• Output Low Voltage (VOL): 0.4 V max (IOL = 2.1 mA)

AC Characteristics

• Address Access Time (tAA): 10/12/15 ns max
• Chip Select Access Time (tACS): 10/12/15 ns max
• Output Enable to Output Valid (tOE): 6 ns max
• Write Pulse Width (tWP): 10/12/15 ns min
• Data Setup Time (tDS): 7 ns min
• Data Hold Time (tDH): 0 ns min

Package Information

Ordering Information

• HM621400HJP-10: 10 ns, 400-mil 32-pin plastic SOJ (CP-32DB)
• HM621400HJP-12: 12 ns, 400-mil 32-pin plastic SOJ (CP-32DB)
• HM621400HJP-15: 15 ns, 400-mil 32-pin plastic SOJ (CP-32DB)
• HM621400HLJP-10: 10 ns L-version, 400-mil 32-pin plastic SOJ (CP-32DB)
• HM621400HLJP-12: 12 ns L-version, 400-mil 32-pin plastic SOJ (CP-32DB)
• HM621400HLJP-15: 15 ns L-version, 400-mil 32-pin plastic SOJ (CP-32DB)

Pin Configuration (Top View)

The 32-pin SOJ package has the following pin arrangement:

Pin	Name	Function
1	A0	Address Input 0
2	A1	Address Input 1
3	A2	Address Input 2
4	A3	Address Input 3
5	A4	Address Input 4
6	A5	Address Input 5
7	CS	Chip Select
8	VCC	Power Supply
9	VSS	Ground
10	Din	Data Input
11	WE	Write Enable
12	A6	Address Input 6
13	A7	Address Input 7
14	A8	Address Input 8
15	A9	Address Input 9
16	A10	Address Input 10
17	A11	Address Input 11
18	A12	Address Input 12
19	A13	Address Input 13
20	A14	Address Input 14
21	A15	Address Input 15
22	Dout	Data Output
23	VCC	Power Supply
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