621400H
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Technical Summary: HM621400H 4-Mbit High-Speed Static RAM
HM621400H 4-Mbit High-Speed Static RAM Technical Summary
Overview
The HM621400H is a high-performance 4-Mbit static RAM organized as 4,194,304 words × 1-bit. This SRAM component achieves high-speed operation through advanced CMOS process technology (4-transistor + 2-poly resistor memory cell) and optimized circuit design. The device is particularly suitable for applications requiring both high speed and high memory density, such as cache memory and buffer memory in computing systems. The component comes in a space-efficient 400-mil 32-pin SOJ package designed for high-density surface mounting applications.
Key Features
- Single Power Supply: 5.0 V ± 10% operation
- High-Speed Performance: Maximum access times of 10 ns, 12 ns, or 15 ns variants
- Fully Static Operation: No clock or timing strobe required
- Symmetric Timing: Equal access and cycle times
- TTL Compatibility: All inputs and outputs directly TTL compatible
- Power Efficiency:
- Operating current: 200/180/160 mA (max)
- TTL standby current: 70/60/50 mA (max)
- CMOS standby current: 5 mA (max), 1.2 mA (max) for L-version
- Data retention current: 0.8 mA (max) for L-version
- Low-Voltage Data Retention: 2 V (min) for L-version
- Optimized Pinout: Center VCC and VSS type pinout configuration
Applications
The HM621400H is designed for high-performance computing and memory-intensive applications including:
- Cache memory subsystems
- High-speed data buffers
- Network equipment memory
- Telecommunications systems
- Industrial control systems
- Embedded computing applications
- High-performance computing systems
Electrical Characteristics
Absolute Maximum Ratings
- Supply Voltage (VCC): -0.5 V to +7.0 V
- Input Voltage (VIN): -0.5 V to VCC + 0.5 V
- Operating Temperature Range: 0°C to +70°C
- Storage Temperature Range: -55°C to +125°C
Recommended Operating Conditions
- Supply Voltage (VCC): 4.5 V to 5.5 V
- Input High Voltage (VIH): 2.2 V min
- Input Low Voltage (VIL): 0.8 V max
- Operating Temperature: 0°C to +70°C
DC Characteristics
- Input Leakage Current (II): ±1 μA max
- Output Leakage Current (IOZ): ±1 μA max
- Output High Voltage (VOH): 2.4 V min (IOH = -2.1 mA)
- Output Low Voltage (VOL): 0.4 V max (IOL = 2.1 mA)
AC Characteristics
- Address Access Time (tAA): 10/12/15 ns max
- Chip Select Access Time (tACS): 10/12/15 ns max
- Output Enable to Output Valid (tOE): 6 ns max
- Write Pulse Width (tWP): 10/12/15 ns min
- Data Setup Time (tDS): 7 ns min
- Data Hold Time (tDH): 0 ns min
Package Information
Ordering Information
- HM621400HJP-10: 10 ns, 400-mil 32-pin plastic SOJ (CP-32DB)
- HM621400HJP-12: 12 ns, 400-mil 32-pin plastic SOJ (CP-32DB)
- HM621400HJP-15: 15 ns, 400-mil 32-pin plastic SOJ (CP-32DB)
- HM621400HLJP-10: 10 ns L-version, 400-mil 32-pin plastic SOJ (CP-32DB)
- HM621400HLJP-12: 12 ns L-version, 400-mil 32-pin plastic SOJ (CP-32DB)
- HM621400HLJP-15: 15 ns L-version, 400-mil 32-pin plastic SOJ (CP-32DB)
Pin Configuration (Top View)
The 32-pin SOJ package has the following pin arrangement:
