HB54A5129F1 DDR SDRAM Module Technical Summary

HB54A5129F1 64M × 72 × 1-Bank DDR SDRAM Module Technical Summary

Overview

The HB54A5129F1 is a high-performance 64M × 72 × 1-bank Double Data Rate (DDR) SDRAM module designed for applications requiring high-speed data transfer and reliable memory operations. This module integrates 18 pieces of 256-Mbit DDR SDRAM (HM5425401BTT) in TSOP packages, along with supporting components including a PLL clock driver, register drivers, and a serial EEPROM for Presence Detect (PD) functionality.

The module achieves high-speed data transfer through a 2-bit prefetch pipelined architecture, with operations synchronized to both the rising and falling edges of the clock signal. The inclusion of data strobe (DQS) signals for both read and write operations enhances data bus reliability at high speeds. The module features a configurable on-chip Delay Locked Loop (DLL) that can be enabled or disabled via the extended mode register.

Packaged in a 184-pin socket-type dual lead-out configuration, the HB54A5129F1 enables high-density mounting without requiring surface mount technology, making it suitable for a wide range of computing and embedded applications.

Key Features

Package: 184-pin socket type (dual lead out)
- Dimensions: 133.35 mm (Length) × 43.18 mm (Height) × 4.00 mm (Thickness)
- Lead pitch: 1.27 mm
Power Supply: 2.5 V (VCC/VCCQ)
Interface: SSTL-2 for all inputs and outputs
Clock Frequency: 100 MHz maximum
Data Synchronization: Inputs and outputs synchronized with DQS
Bank Architecture: 4 independently operable banks
Burst Operations: Supports burst read/write with programmable burst lengths (2/4/8)
Burst Sequence: Programmable as sequential or interleave
Addressing: Supports even and odd start addressing
CAS Latency: 3
Refresh:
- 8192 refresh cycles: 7.8 µs (8192 row/64 ms)
- Supports auto refresh and self refresh modes

Applications

The HB54A5129F1 DDR SDRAM module is designed for use in a variety of high-performance computing and embedded systems, including:

Enterprise servers and workstations
High-performance computing systems
Networking equipment (routers, switches)
Telecommunications infrastructure
Industrial control systems
Embedded computing platforms
Test and measurement equipment

Electrical Characteristics

Absolute Maximum Ratings

Supply Voltage (VCC/VCCQ): -0.5V to +3.6V
Input Voltage: -0.5V to VCCQ + 0.5V
Operating Temperature: 0°C to +70°C (commercial) or -40°C to +85°C (industrial)
Storage Temperature: -55°C to +125°C

Recommended Operating Conditions

Supply Voltage (VCC/VCCQ): 2.3V to 2.7V
Input High Voltage (VIH): VREF + 0.18V to VCCQ + 0.3V
Input Low Voltage (VIL): -0.3V to VREF - 0.18V
Operating Temperature: 0°C to +70°C (commercial grade)

DC Characteristics

Input Leakage Current: ±5 μA (max)
Output Leakage Current: ±5 μA (max)
Active Current (ICC): TBD mA (typical at 100 MHz)
Standby Current (ISB): TBD mA (typical)
Self Refresh Current (ISSR): TBD mA (typical)

Package Information

184-Pin Socket Type Package Details

Package Type: 184-pin socket type (dual lead out)
Dimensions:
- Length: 133.35 mm
- Height: 43.18 mm
- Thickness: 4.00 mm
Lead Pitch: 1.27 mm
Mounting: Socket mounting (no surface mount required)
Weight: Approximately 25g (typical)

Pin Configuration

The 184-pin configuration includes:

Address inputs (A0-A12)
Bank address inputs (BA0-BA1)
Data inputs/outputs (DQ0-DQ71)
Data strobes (DQS0-DQS8)
Clock inputs (CK, CK#)
Control signals (RAS#, CAS#, WE#, CS#, CKE)
Power and ground pins (VCC, VCCQ, VSS, VSSQ)

Ordering Information

Type No.	Frequency	CAS Latency	Package	Contact Pad
HB54A5129F1-10B	100 MHz	3	184-pin dual lead out	Standard

Functional Description

The HB54A5129F1 operates as a high-speed DDR SDRAM module with several advanced features:

Memory Organization

The module is organized as 64M × 72 with four independent memory banks. This organization allows simultaneous operation of different banks, increasing overall memory bandwidth.

Burst Operation

The module supports burst lengths of 2, 4, or 8, with programmable burst sequence (sequential or interleave). The burst read stop capability allows for efficient data transfer management.

Refresh Operations

The HB54A5129F1 supports both auto refresh and self refresh modes. The auto refresh mode requires 8192 refresh cycles every 64ms (7.8µs interval), while the self refresh mode maintains data integrity with minimal power consumption when the system is idle.