HM5164405F Series 64M-bit DRAM Technical Summary

Overview

The Hitachi HM5164405F Series and HM5165405F Series are high-performance 64M-bit dynamic RAMs organized as 16,777,216-word × 4-bit memory arrays. These devices leverage advanced CMOS process technology to achieve optimal balance between performance and power efficiency. The series features Extended Data Out (EDO) Page Mode for high-speed access operations and is available in standard 32-pin plastic SOJ packages. Designed for 3.3V systems, these DRAMs are particularly suitable for applications requiring reliable memory with low power consumption.

Key Features

• Memory Organization: 16,777,216 words × 4 bits
• Power Supply: Single 3.3V ± 0.3V operation
• Access Time: 50ns/60ns maximum
• Power Dissipation:
  • Active Mode: 396mW/360mW max (HM5164405F Series), 468mW/396mW max (HM5165405F Series)
  • Standby Mode: 1.8mW max (CMOS interface), 1.1mW max (L-version)
• EDO Page Mode: Enables high-speed consecutive data access
• Refresh Modes: Comprehensive refresh options including RAS-only, CAS-before-RAS, hidden refresh, and self refresh (L-version)
• Battery Backup: Supported in L-version for low-power applications

Applications

The HM5164405F Series is designed for a wide range of applications requiring reliable, high-density memory with low power consumption:

• Computer systems and workstations
• Networking equipment and telecommunications systems
• Embedded systems and industrial controllers
• Printers and other peripheral devices
• Battery-powered portable devices (L-version)
• Automotive electronics (where temperature range permits)

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (VCC): -0.5V to +4.6V
• Input Voltage (VI): -0.5V to VCC +0.5V
• Operating Temperature Range: 0°C to +70°C
• Storage Temperature Range: -55°C to +125°C

Recommended Operating Conditions

• Supply Voltage (VCC): 3.3V ± 0.3V
• Input High Voltage (VIH): 2.0V min (VCC = 3.0V)
• Input Low Voltage (VIL): 0.8V max (VCC = 3.0V)
• Operating Temperature: 0°C to +70°C

DC Characteristics

• Input Leakage Current (II): ±1μA max
• Output Leakage Current (IOZ): ±1μA max
• Standby Current (ISB1): 500μA max (CMOS level)
• Standby Current (ISB2): 300μA max (L-version)

AC Characteristics

• Random Read Cycle Time (tRC): 110ns min (50ns version), 130ns min (60ns version)
• RAS Precharge Time (tRP): 40ns min
• CAS Pulse Width (tCAS): 20ns min
• Address Setup Time (tAS): 0ns min
• Address Hold Time (tAH): 10ns min

Refresh Characteristics

The HM5164405F Series offers multiple refresh options to accommodate different system requirements:

• RAS-only Refresh:
  • HM5164405F/HM5164405FL: 8192 cycles/64ms
  • HM5165405F/HM5165405FL: 4096 cycles/64ms
• CAS-before-RAS Refresh: 4096 cycles/64ms (all versions)
• Hidden Refresh: 4096 cycles/64ms (all versions)
• Self Refresh: Available in L-version only

Package Information

The HM5164405F Series is available in the following package:

• Package Type: 32-pin Plastic SOJ (Small Outline J-lead)
• Package Dimensions: 20.95mm × 10.16mm × 3.56mm (typical)
• Pin Pitch: 1.27mm
• Lead Material: Alloy 42 or equivalent
• Lead Finish: Solder plating

Ordering Information

The device is available in several versions to meet different application requirements:

• HM5164405F-50: 50ns access time, standard version
• HM5164405F-60: 60ns access time, standard version
• HM5164405FL-50: 50ns access time, low-power version
• HM5164405FL-60: 60ns access time, low-power version
• HM5165405F-50: 50ns access time, alternate refresh version
• HM5165405F-60: 60ns access time, alternate refresh version
• HM5165405FL-50: 50ns access time, alternate refresh low-power version
• HM5165405FL-60: 60ns access time, alternate refresh low-power version

Functional Description

The HM5164405F Series operates as a standard dynamic RAM with enhanced features for improved performance. The memory array is organized as four banks of 4,194,304 × 4 bits, allowing efficient memory management. The Extended Data Out (EDO) Page Mode feature enables faster access to consecutive memory locations by maintaining the output data valid while the next address is being accessed.

The device supports multiple refresh methods to accommodate different system architectures. The RAS-only refresh requires external control of the refresh cycle timing, while the CAS-before-RAS refresh simplifies refresh control by using the CAS signal to initiate refresh cycles. The hidden refresh allows refresh operations to occur during normal memory accesses, improving overall system performance.

Design Considerations

When designing with the HM5164405F Series, consider the following:

• Proper power supply decoupling is essential for stable operation
• Signal integrity should be maintained, especially for clock and control signals
• Refresh timing must be strictly observed to prevent data loss
• For battery backup applications, use the L-version with self refresh capability
• Address signals should meet setup and hold time requirements for reliable operation

Quality and Reliability

The HM5164405F Series meets stringent quality and reliability standards:

• 100% tested for functionality and performance
• High-temperature burn-in performed on all devices
• Comprehensive quality assurance procedures
• Reliability monitoring throughout production