K4E640411C

K4E640411C - 16Mx4 EDO Mode DRAM Technical Summary

Overview

The K4E640411C is a high-performance 16Mx4 Extended Data Out (EDO) Mode Dynamic Random Access Memory (DRAM) component fabricated using Samsung's advanced CMOS process technology. This device is designed to deliver high bandwidth and low power consumption, making it suitable for a wide range of computing and embedded applications. The K4E640411C features multiple refresh modes including CAS-before-RAS refresh, RAS-only refresh, and Hidden refresh capabilities, providing flexibility in system design.

Functional Block Diagram

The device architecture includes a 4K refresh mechanism (*1) which ensures data integrity while optimizing power consumption. The EDO mode operation allows for improved performance over conventional DRAM by maintaining the output data valid until the next CAS cycle begins.

Key Features

• 16Mx4 organization (64Mb density)
• Extended Data Out (EDO) mode operation
• Multiple refresh modes:
  • CAS-before-RAS refresh (CBR)
  • RAS-only refresh
  • Hidden refresh
• 4K refresh cycle capability
• Fabricated with advanced CMOS process technology
• High bandwidth operation
• Low power consumption design
• Single +5V ±10% power supply
• TTL-compatible inputs and outputs
• Standard 400mil SOJ package

Applications

The K4E640411C is suitable for a variety of applications including:

• Main memory in desktop and portable computers
• Workstations and servers
• Embedded systems
• Networking equipment
• Telecommunications systems
• Industrial control systems
• Test and measurement equipment

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (VCC): -0.5V to +7.0V
• Input Voltage (VI): -0.5V to VCC+0.5V
• Operating Temperature (TA): 0°C to +70°C
• Storage Temperature (TSTG): -55°C to +125°C

Recommended Operating Conditions

• Supply Voltage (VCC): +5V ±10%
• Input High Voltage (VIH): 2.2V min
• Input Low Voltage (VIL): 0.8V max
• Operating Temperature (TA): 0°C to +70°C

DC Characteristics

• Input Leakage Current (ILI): ±1μA max
• Output Leakage Current (ILO): ±1μA max
• Operating Current (ICC1): 120mA max (active)
• Standby Current (ICC2): 30mA max
• Refresh Current (ICC3): 40mA max

AC Characteristics

• RAS Access Time (tRAC): 60ns max
• CAS Access Time (tCAC): 15ns max
• CAS to Output Delay (tCO): 15ns max
• RAS Precharge Time (tRP): 30ns min
• CAS Precharge Time (tCP): 15ns min
• Write Pulse Width (tWP): 30ns min
• Data-in Setup Time (tDS): 10ns min
• Data-in Hold Time (tDH): 0ns min
• Refresh Period (tREF): 64ms max

Package Information

Physical Dimensions

The K4E640411C is available in a 400mil SOJ (Small Outline J-lead) package with the following dimensions:

• Package Type: 28-pin SOJ
• Width: 400mil (10.16mm)
• Length: 0.620" (15.75mm) nominal
• Height: 0.125" (3.18mm) max
• Lead Pitch: 1.27mm (50mil)

Pin Configuration

The 28-pin SOJ package has the following pinout:

• Pin 1: VCC
• Pin 2: DQ1
• Pin 3: DQ2
• Pin 4: GND
• Pin 5: DQ3
• Pin 6: DQ4
• Pin 7: WE
• Pin 8: CAS
• Pin 9: RAS
• Pin 10: A8
• Pin 11: A0
• Pin 12: A1
• Pin 13: A2
• Pin 14: A3
• Pin 15: A4
• Pin 16: A5
• Pin 17: A6
• Pin 18: A7
• Pin 19: A9
• Pin 20: OE
• Pin 21: A10
• Pin 22: A11
• Pin 23: NC
• Pin 24: DQ8
• Pin 25: DQ7
• Pin 26: GND
• Pin 27: DQ6
• Pin 28: DQ5

Timing Diagrams

The device supports various timing modes including:

• Read Cycle Timing
• Write Cycle Timing
• Read-Modify-Write Cycle Timing
• Refresh Cycle Timing (CBR, RAS-only)
• Page Mode Cycle Timing

Quality and Reliability

The K4E640411C meets the following quality and reliability standards:

• 100% tested for functionality
• High temperature burn-in performed
• ESD protection exceeds 2000V
• Latch-up immunity meets JEDEC standards

Ordering Information

The device is available in different speed grades and package options. The complete part number includes:

• Base part number: K4E640411C
• Speed grade suffix (e.g., -X for 60ns)
• Package code (e.g., C for SOJ)
• Temperature range (e.g., I for industrial)

Conclusion

The K4E640411C 16Mx4 EDO Mode DRAM from Samsung provides a high-performance memory solution for a wide range of computing applications. With its advanced CMOS technology, multiple refresh modes, and EDO operation, this device offers an optimal balance of performance, power consumption, and reliability. The standard 400mil SOJ package makes it compatible with existing system designs while providing the density required for modern applications.