K4F640812D 8Mx8 Fast Page Mode DRAM

Overview

The K4F640812D is an 8Mx8 Fast Page Mode Dynamic Random Access Memory (DRAM) device manufactured using Samsung's advanced CMOS process. This component is designed to deliver high bandwidth, low power consumption, and high reliability, making it suitable for a variety of computing and embedded applications. The device supports multiple refresh modes, including CAS-before-RAS, RAS-only, Hidden refresh, and Self-refresh (L-version only). It is compatible with LVTTL (3.3V) logic levels and is available in industry-standard packages.

Features

• Fast Page Mode Operation: Enables high-speed data access by allowing multiple column accesses within the same row.
• Multiple Refresh Modes: Supports CAS-before-RAS refresh, RAS-only refresh, and Hidden refresh for flexible memory management.
• Self-Refresh Capability (L-version only): Reduces power consumption by allowing the device to refresh itself without external control signals.
• Fast Parallel Test Mode: Facilitates efficient testing during manufacturing and quality assurance.
• LVTTL (3.3V) Compatibility: Inputs and outputs are compatible with 3.3V logic levels, ensuring seamless integration with modern systems.
• Early Write or Output Enable Controlled Write: Provides flexibility in write operation timing.
• JEDEC Standard Pinout: Ensures compatibility with industry-standard designs and layouts.
• Package Options: Available in Plastic SOJ and TSOP(II) packages for versatile mounting options.
• Power Supply: Operates at +3.3V ±0.3V, making it suitable for low-power applications.

Applications

The K4F640812D is ideal for a wide range of applications, including but not limited to:

• Computing Systems: Used in desktops, laptops, and servers for temporary data storage.
• Embedded Systems: Suitable for industrial control systems, medical devices, and automotive electronics.
• Networking Equipment: Employed in routers, switches, and other network infrastructure devices.
• Consumer Electronics: Found in digital TVs, set-top boxes, and gaming consoles.
• Telecommunications: Used in base stations and communication modules.

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (Vcc): -0.5V to +4.6V
• Input Voltage (Vin): -0.5V to Vcc +0.5V
• Output Voltage (Vout): -0.5V to Vcc +0.5V
• Operating Temperature Range: 0°C to +70°C (Commercial), -40°C to +85°C (Industrial)
• Storage Temperature Range: -55°C to +150°C

Recommended Operating Conditions

• Supply Voltage (Vcc): +3.3V ±0.3V
• Input High Voltage (VIH): 2.0V to Vcc +0.3V
• Input Low Voltage (VIL): -0.3V to +0.8V
• Output High Voltage (VOH): 2.4V (min) at IOH = -4.0mA
• Output Low Voltage (VOL): 0.4V (max) at IOL = +4.0mA

Timing Characteristics

• RAS Precharge Time (tRP): 20ns (min)
• CAS Precharge Time (tCP): 20ns (min)
• Row Address Setup Time (tASR): 0ns (min)
• Row Address Hold Time (tRAH): 15ns (min)
• Column Address Setup Time (tASC): 0ns (min)
• Column Address Hold Time (tCAH): 15ns (min)
• Access Time from RAS (tRAC): 60ns (max)
• Access Time from CAS (tCAC): 15ns (max)

Package Information

Plastic SOJ Package

• Package Dimensions: 400mil x 875mil
• Pin Count: 32
• Lead Pitch: 1.27mm
• Mounting Style: Surface Mount

TSOP(II) Package

• Package Dimensions: 10.16mm x 20.95mm
• Pin Count: 32
• Lead Pitch: 0.8mm
• Mounting Style: Surface Mount

Functional Block Diagram

The K4F640812D features a memory array of 8,388,608 x 8 cells, organized for efficient data storage and retrieval. The control clocks (RAS, CAS, W) manage the timing of read and write operations, while the address inputs (A0~A12) select the desired memory locations. The device includes a 4K refresh mechanism to maintain data integrity.

Conclusion

The K4F640812D is a versatile and reliable DRAM solution for applications requiring high-speed data access and low power consumption. Its multiple refresh modes, LVTTL compatibility, and industry-standard packaging make it a preferred choice for designers across various industries. Samsung's advanced CMOS process ensures high performance and durability, making this component a robust option for modern electronic systems.