2N5088 NPN Transistor Technical Summary

Overview

The 2N5088 is a general-purpose NPN bipolar junction transistor (BJT) housed in a TO-92 (SOT54) plastic package. Designed for low-current and low-voltage applications, this transistor is widely used in amplification and switching circuits. Its compact form factor and reliable performance make it suitable for a variety of electronic designs, from consumer electronics to industrial control systems.

Features

• Low Current Operation: Maximum collector current (Ic) of 100 mA, making it ideal for small-signal applications.
• Low Voltage Rating: Maximum collector-emitter voltage (V_CEO) of 30 V, suitable for low-power circuits.
• High Current Gain (h_FE): Offers excellent amplification capabilities with a typical h_FE ranging from 300 to 900 at 1 mA collector current.
• Compact TO-92 Package: Easy to mount on PCBs or breadboards, with standard pin configurations.
• Reliable Performance: Stable operation across a wide temperature range, ensuring durability in various environments.

Applications

The 2N5088 is versatile and finds use in numerous electronic applications, including:

• Signal Amplification: Used in audio preamplifiers, RF stages, and other small-signal amplification circuits.
• Switching Circuits: Suitable for driving relays, LEDs, and other low-power devices in switching applications.
• Oscillators and Waveform Generators: Employed in LC and RC oscillator designs due to its high gain.
• Consumer Electronics: Found in radios, televisions, and other household electronic devices.
• Industrial Control Systems: Used in sensor interfaces and control modules where low-power switching is required.

Electrical Characteristics

The following table summarizes the key electrical specifications of the 2N5088 transistor under standard test conditions (unless otherwise noted):

Absolute Maximum Ratings

• Collector-Emitter Voltage (V_CEO): 30 V
• Collector-Base Voltage (V_CBO): 45 V
• Emitter-Base Voltage (V_EBO): 5 V
• Collector Current (I_C): 100 mA
• Total Power Dissipation (P_tot): 625 mW at 25°C
• Operating Temperature Range (T_j): -55°C to +150°C

Typical Performance Characteristics

• DC Current Gain (h_FE): 300 - 900 (at I_C = 1 mA, V_CE = 5 V)
• Collector-Emitter Saturation Voltage (V_CE(sat)): ≤ 0.3 V (at I_C = 10 mA, I_B = 1 mA)
• Transition Frequency (f_T): 50 MHz (typical)
• Noise Figure (NF): ≤ 5 dB (at 1 kHz, I_C = 100 µA, V_CE = 5 V)

Package Information

The 2N5088 is housed in a TO-92 (SOT54) plastic package, which is a widely used through-hole package for small-signal transistors. Below are the key mechanical details:

TO-92 Package Dimensions

• Package Type: TO-92 (SOT54)
• Body Material: Molded Plastic
• Lead Material: Tin-Plated Copper
• Pin Configuration (View from front, flat side):
  • Pin 1: Emitter (E)
  • Pin 2: Base (B)
  • Pin 3: Collector (C)
• Dimensions (Approx.):
  • Height: 5.2 mm
  • Width: 4.3 mm
  • Depth: 4.3 mm
  • Lead Spacing: 2.54 mm (standard pitch)

Handling and Mounting Notes

• Ensure proper lead bending to avoid stress on the transistor body.
• Avoid exceeding the maximum soldering temperature (260°C for 10 seconds).
• Store in anti-static packaging to prevent damage from electrostatic discharge (ESD).

Conclusion

The 2N5088 NPN transistor is a reliable and cost-effective component for low-current and low-voltage applications. Its high current gain, compact package, and robust performance make it a popular choice among designers for amplification and switching tasks. Whether used in consumer electronics or industrial systems, the 2N5088 delivers consistent performance under a variety of operating conditions.