The 2N6287 is a silicon epitaxial-base NPN power transistor designed for high-power amplification and switching applications. This robust component is engineered to handle substantial current and voltage levels, making it suitable for demanding industrial and commercial applications. The transistor's construction ensures reliable performance under high-stress conditions, with excellent thermal characteristics and durability.
With its NPN polarity, the 2N6287 is optimized for use in circuits requiring efficient current control and amplification. The epitaxial-base technology enhances its switching speed and reduces saturation voltage, contributing to improved overall efficiency in power applications.
The 2N6287 is widely used in a variety of high-power electronic applications, including:
The following table outlines the key electrical specifications of the 2N6287 under standard test conditions (TA = 25°C unless otherwise noted):
The 2N6287 is housed in a TO-3 metal can package, which offers excellent thermal performance and mechanical strength. The package is designed for high-power applications where efficient heat dissipation is critical.
The TO-3 package features a cylindrical metal can with two leads (Base and Emitter) and the Collector connected to the case. The dimensions are as follows:
The 2N6287 is a high-performance NPN power transistor designed for demanding applications requiring high current and voltage handling capabilities. Its epitaxial-base construction, low saturation voltage, and robust TO-3 package make it an excellent choice for power amplification, switching regulators, and motor control circuits. With its reliable thermal characteristics and durable design, the 2N6287 is well-suited for industrial and commercial applications where efficiency and longevity are critical.