2N6487 - Bipolar Power Transistor

Overview

The 2N6487 is a high-performance bipolar power transistor designed for general-purpose amplifier and switching applications. This NPN transistor is part of a robust family of power transistors that offer high current capability, low saturation voltage, and excellent thermal stability. The 2N6487 is widely used in power supply circuits, motor control, and audio amplification due to its reliable performance and rugged construction.

Features

• High Current Handling: Capable of continuous collector current (I_C) up to 8A.
• Low Saturation Voltage: V_CE(sat) of 1.5V (max) at I_C = 4A, ensuring efficient switching.
• High Power Dissipation: Supports power dissipation (P_D) up to 75W at 25°C.
• Wide Operating Temperature Range: -65°C to +200°C, suitable for harsh environments.
• High Voltage Tolerance: Collector-Emitter voltage (V_CEO) of 80V, making it suitable for medium-voltage applications.
• Fast Switching Speed: Transition frequency (f_T) of 4MHz, enabling efficient high-frequency operation.
• Complementary PNP Pair: Available as 2N6488 for complementary symmetry circuits.

Applications

The 2N6487 is versatile and finds use in a variety of electronic circuits, including:

• Power Supplies: Linear and switching regulators due to its high current and voltage ratings.
• Motor Control: Driver circuits for DC motors and solenoids.
• Audio Amplifiers: Output stages in high-fidelity audio systems.
• Relay and Solenoid Drivers: Efficient switching for inductive loads.
• General-Purpose Switching: On/off control in industrial and consumer electronics.

Electrical Characteristics

The following table summarizes the key electrical specifications of the 2N6487 at 25°C unless otherwise noted:

Absolute Maximum Ratings

• Collector-Emitter Voltage (V_CEO): 80V
• Collector-Base Voltage (V_CBO): 100V
• Emitter-Base Voltage (V_EBO): 5V
• Collector Current (I_C): 8A (continuous)
• Base Current (I_B): 4A (max)
• Total Power Dissipation (P_D): 75W at 25°C (derate above 25°C)

Thermal Characteristics

• Thermal Resistance, Junction-to-Case (R_θJC): 1.67°C/W
• Thermal Resistance, Junction-to-Ambient (R_θJA): 62.5°C/W
• Maximum Junction Temperature (T_J): 200°C

DC Current Gain (h_FE)

• Minimum h_FE at I_C = 4A, V_CE = 4V: 30
• Typical h_FE at I_C = 4A, V_CE = 4V: 100

Switching Characteristics

• Turn-On Time (t_on): 500ns (typical)
• Turn-Off Time (t_off): 1.5µs (typical)
• Collector-Emitter Saturation Voltage (V_CE(sat)): 1.5V (max) at I_C = 4A, I_B = 0.4A

Package Information

The 2N6487 is available in a TO-220 package, which is widely used for power transistors due to its excellent thermal and mechanical properties. The package dimensions and pinout are as follows:

TO-220 Package Dimensions

• Total Height: 16.5mm (max)
• Lead Length: 12.7mm (min)
• Mounting Hole Diameter: 3.8mm (recommended)
• Weight: Approximately 2.0g

Pin Configuration

• Pin 1 (Left): Base (B)
• Pin 2 (Center): Collector (C)
• Pin 3 (Right): Emitter (E)

Thermal Management

For optimal performance, the 2N6487 should be mounted on a heat sink when operating near maximum power dissipation. The TO-220 package features a metal tab that can be attached to a heat sink using thermal compound to minimize thermal resistance.

Conclusion

The 2N6487 is a reliable and versatile power transistor suitable for a wide range of applications requiring high current and voltage handling. Its robust design, low saturation voltage, and excellent thermal characteristics make it a preferred choice for engineers designing power electronics circuits. Whether used in linear amplifiers or high-speed switching applications, the 2N6487 delivers consistent performance under demanding conditions.