2N6490 - Silicon PNP Power Transistor

Overview

The 2N6490 is a silicon PNP power transistor designed for general-purpose amplifier and switching applications. This robust component is characterized by its high current capability, low saturation voltage, and excellent gain performance, making it suitable for a wide range of industrial and consumer electronics applications. The transistor is housed in a TO-220 package, providing efficient thermal dissipation and mechanical durability.

Features

• High Current Handling: Capable of continuous collector current (I_C) up to 8A.
• Low Saturation Voltage: V_CE(sat) of 1.5V (max) at I_C = 4A, ensuring efficient switching performance.
• High Gain: DC current gain (h_FE) ranging from 40 to 160 at I_C = 4A, providing strong signal amplification.
• Power Dissipation: Maximum power dissipation (P_D) of 75W, enabling use in high-power circuits.
• TO-220 Package: Robust and thermally efficient package suitable for heat sink mounting.
• Wide Operating Temperature Range: Functional from -65°C to +200°C, ensuring reliability in harsh environments.

Applications

The 2N6490 is versatile and finds use in a variety of electronic circuits, including:

• Power Amplifiers: Suitable for audio and RF amplification stages due to its high gain and current capability.
• Switching Regulators: Efficiently handles high-current switching in power supply circuits.
• Motor Control: Used in driver circuits for DC motors and solenoids.
• Relay Drivers: Provides reliable switching for inductive loads.
• Industrial Equipment: Employed in control systems, inverters, and power management modules.

Electrical Characteristics

The following tables outline the key electrical specifications of the 2N6490 under standard test conditions (T_A = 25°C unless otherwise noted).

Absolute Maximum Ratings

• Collector-Emitter Voltage (V_CEO): -80V
• Collector-Base Voltage (V_CBO): -100V
• Emitter-Base Voltage (V_EBO): -5V
• Collector Current (I_C): 8A (continuous)
• Base Current (I_B): 4A (peak)
• Total Power Dissipation (P_D): 75W at T_C = 25°C
• Operating and Storage Temperature Range: -65°C to +200°C

Thermal Characteristics

• Thermal Resistance, Junction-to-Case (R_θJC): 1.67°C/W
• Thermal Resistance, Junction-to-Ambient (R_θJA): 62.5°C/W

On Characteristics

• DC Current Gain (h_FE): 40 to 160 (I_C = 4A, V_CE = -4V)
• Collector-Emitter Saturation Voltage (V_CE(sat)): 1.5V max (I_C = 4A, I_B = 0.4A)
• Base-Emitter Saturation Voltage (V_BE(sat)): 1.5V max (I_C = 4A, I_B = 0.4A)

Off Characteristics

• Collector Cutoff Current (I_CEO): 1mA max (V_CE = -80V, I_E = 0)
• Emitter Cutoff Current (I_EBO): 100µA max (V_EB = -5V, I_C = 0)

Package Information

The 2N6490 is available in a TO-220 package, which is widely used for power transistors due to its excellent thermal and mechanical properties. Below are the key dimensions and mechanical details:

TO-220 Package Dimensions

• Total Height: 16.0mm (max)
• Lead Length: 12.7mm (min)
• Lead Spacing: 2.54mm (between leads)
• Mounting Hole Diameter: 3.5mm (recommended)
• Weight: Approximately 2.0g

Package Marking

The device is marked with "2N6490" on the front face for easy identification. The package also includes manufacturer-specific codes for lot and date tracking.

Thermal Considerations

For optimal performance, the 2N6490 should be mounted on a heat sink when operating near maximum power dissipation. The thermal resistance from junction to ambient (R_θJA) can be significantly reduced with proper heat sinking, ensuring long-term reliability.

Conclusion

The 2N6490 is a high-performance PNP power transistor offering excellent current handling, low saturation voltage, and robust thermal characteristics. Its TO-220 package makes it suitable for a broad range of power amplification and switching applications, from consumer electronics to industrial systems. Engineers and designers can rely on the 2N6490 for efficient and reliable operation in demanding environments.