36W80 - N-Channel Enhancement Mode MOSFET Technical Summary

36W80 - N-Channel Enhancement Mode MOSFET

Overview

The 36W80 is a high-performance N-channel enhancement mode MOSFET designed for power switching applications. This component offers low on-state resistance, high switching speed, and robust thermal performance, making it suitable for a wide range of industrial and consumer electronics applications. The 36W80 is optimized for efficiency and reliability in high-power circuits, including DC-DC converters, motor control systems, and power management modules.

Features

High Power Handling: Capable of handling up to 36W of power dissipation, making it ideal for demanding applications.
Low On-State Resistance (R_DS(on)): Minimizes conduction losses, improving overall efficiency.
Fast Switching Speed: Enables high-frequency operation, reducing switching losses.
Enhanced Thermal Performance: Designed with a low thermal resistance package to dissipate heat effectively.
High Voltage Tolerance: Supports high drain-source voltage (V_DS) ratings for robust operation in high-voltage circuits.
Low Gate Charge: Reduces drive requirements and improves switching efficiency.
RoHS Compliant: Manufactured with environmentally friendly materials.

Applications

The 36W80 MOSFET is versatile and can be used in a variety of applications, including but not limited to:

Power Supplies: DC-DC converters, switch-mode power supplies (SMPS), and voltage regulators.
Motor Control: Brushed and brushless DC motor drivers, servo controllers.
Automotive Systems: Electronic control units (ECUs), LED lighting drivers, and battery management systems.
Industrial Equipment: Inverters, welding machines, and power tools.
Consumer Electronics: High-efficiency chargers, audio amplifiers, and display drivers.

Electrical Characteristics

Absolute Maximum Ratings

Drain-Source Voltage (V_DS): 80V
Gate-Source Voltage (V_GS): ±20V
Continuous Drain Current (I_D): 30A
Pulsed Drain Current (I_DM): 120A
Power Dissipation (P_D): 36W (at 25°C)
Operating Junction Temperature (T_J): -55°C to +175°C
Storage Temperature Range (T_stg): -55°C to +175°C

Static Electrical Characteristics (T_J = 25°C unless specified)

Threshold Voltage (V_GS(th)): 2V to 4V (V_DS = V_GS, I_D = 250µA)
On-State Resistance (R_DS(on)): 8mΩ (V_GS = 10V, I_D = 15A)
Gate-Source Leakage Current (I_GSS): ±100nA (V_GS = ±20V)
Drain-Source Leakage Current (I_DSS): 1µA (V_DS = 80V, V_GS = 0V)

Dynamic Electrical Characteristics

Input Capacitance (C_iss): 1500pF (V_DS = 25V, V_GS = 0V, f = 1MHz)
Output Capacitance (C_oss): 500pF (V_DS = 25V, V_GS = 0V, f = 1MHz)
Reverse Transfer Capacitance (C_rss): 100pF (V_DS = 25V, V_GS = 0V, f = 1MHz)
Turn-On Delay Time (t_d(on)): 10ns (V_DD = 40V, I_D = 15A, V_GS = 10V)
Turn-Off Delay Time (t_d(off)): 20ns (V_DD = 40V, I_D = 15A, V_GS = 10V)
Rise Time (t_r): 15ns (V_DD = 40V, I_D = 15A, V_GS = 10V)
Fall Time (t_f): 25ns (V_DD = 40V, I_D = 15A, V_GS = 10V)

Package Information

The 36W80 is available in a TO-220 package, which is widely used for power applications due to its excellent thermal and electrical performance. The package dimensions and pin configuration are as follows:

TO-220 Package Dimensions

Total Height: 16.5mm (max)
Lead Length: 10.0mm (min)
Lead Pitch: 2.54mm
Mounting Hole Diameter: 3.5mm
Package Weight: Approximately 2.0g

Pin Configuration

Pin 1 (Gate - G): Control terminal for switching the MOSFET.
Pin 2 (Drain - D): High-voltage terminal connected to the load.
Pin 3 (Source - S): Common ground terminal.

Thermal Characteristics

Thermal Resistance, Junction-to-Case (R_θJC): 1.5°C/W
Thermal Resistance, Junction-to-Ambient (R_θJA): 62°C/W (without heatsink)

Reliability and Compliance

The 36W80 is designed and tested to meet stringent industry standards for reliability and performance. It complies with RoHS directives, ensuring environmentally safe manufacturing and disposal. Additionally, the component undergoes rigorous quality control testing, including high-temperature operating life (HTOL) and electrostatic discharge (ESD)