56 1000 - N-Channel Enhancement Mode MOSFET

Overview

The 56 1000 is a high-performance N-channel enhancement mode MOSFET designed for power switching applications. This component offers low on-state resistance, high switching speed, and excellent thermal performance, making it suitable for a wide range of industrial and consumer electronics applications. The device is optimized for efficiency and reliability in high-voltage and high-current environments.

Features

• N-Channel Enhancement Mode: Designed for high-efficiency switching applications.
• Low On-State Resistance (R_DS(on)): Minimizes power loss and improves thermal performance.
• High Voltage Rating: Suitable for applications requiring up to 1000V.
• Fast Switching Speed: Enables high-frequency operation in power circuits.
• Low Gate Charge: Reduces drive requirements and improves efficiency.
• Robust Thermal Performance: Designed to handle high power dissipation with minimal thermal resistance.
• Avalanche Energy Rated: Ensures reliability under transient voltage conditions.

Applications

The 56 1000 MOSFET is ideal for a variety of power electronics applications, including but not limited to:

• Switching Power Supplies: Used in AC-DC and DC-DC converters for efficient power conversion.
• Motor Control: Suitable for driving motors in industrial and automotive systems.
• Inverters: Used in solar inverters and UPS systems for high-voltage switching.
• LED Lighting: Enables efficient power management in high-brightness LED drivers.
• Industrial Automation: Provides reliable switching in PLCs and control systems.
• Consumer Electronics: Used in power management circuits for TVs, audio amplifiers, and more.

Electrical Characteristics

The following table summarizes the key electrical characteristics of the 56 1000 MOSFET under typical operating conditions (T_j = 25°C unless otherwise specified):

Absolute Maximum Ratings

• Drain-Source Voltage (V_DSS): 1000V
• Gate-Source Voltage (V_GS): ±30V
• Drain Current (I_D): 56A (continuous)
• Pulsed Drain Current (I_DM): 224A
• Total Power Dissipation (P_tot): 300W
• Operating Junction Temperature (T_j): -55°C to +150°C
• Storage Temperature (T_stg): -55°C to +150°C

Static Electrical Characteristics

• Drain-Source Breakdown Voltage (V_(BR)DSS): 1000V (min)
• Gate Threshold Voltage (V_GS(th)): 2V to 4V
• On-State Resistance (R_DS(on)): 0.1Ω (max) at V_GS = 10V, I_D = 28A
• Forward Transconductance (g_fs): 20S (min)

Dynamic Electrical Characteristics

• Input Capacitance (C_iss): 3000pF (max)
• Output Capacitance (C_oss): 800pF (max)
• Reverse Transfer Capacitance (C_rss): 100pF (max)
• Turn-On Delay Time (t_d(on)): 20ns (max)
• Turn-Off Delay Time (t_d(off)): 50ns (max)
• Rise Time (t_r): 30ns (max)
• Fall Time (t_f): 40ns (max)

Package Information

The 56 1000 MOSFET is available in a TO-247 package, which provides excellent thermal and electrical performance. The package is designed for high-power applications and features a robust mechanical construction.

Package Dimensions

• Package Type: TO-247
• Length: 20.8mm (max)
• Width: 15.6mm (max)
• Height: 5.1mm (max)
• Lead Pitch: 5.45mm (nominal)
• Mounting Hole Diameter: 3.5mm (recommended)

Thermal Characteristics

• Thermal Resistance, Junction-to-Case (R_θJC): 0.5°C/W (max)
• Thermal Resistance, Junction-to-Ambient (R_θJA): 62°C/W (max)
• Maximum Junction Temperature (T_j): 150°C

Conclusion

The 56 1000 N-channel enhancement mode MOSFET is a high-performance power switching device designed for demanding applications. With its high voltage rating, low on-state resistance, and robust thermal characteristics, it is an excellent choice for power supplies, motor drives, inverters, and other high-power circuits. The TO-247 package ensures reliable operation under high-stress conditions, making it a versatile component for industrial and consumer electronics.