56 200 N-Channel Enhancement Mode MOSFET

Overview

The 56 200 is a high-performance N-channel enhancement mode MOSFET designed for a wide range of switching and amplification applications. This component is optimized for low on-state resistance (R_DS(on)) and high-speed switching, making it ideal for power management, motor control, and other high-efficiency applications. The MOSFET is built using advanced silicon technology to ensure reliability and performance under demanding conditions.

Features

• N-Channel Enhancement Mode: Designed for positive gate-to-source voltage operation.
• Low On-State Resistance (R_DS(on)): Minimizes conduction losses for improved efficiency.
• High-Speed Switching: Suitable for high-frequency applications.
• Low Gate Charge: Reduces switching losses and improves performance in PWM applications.
• High Current Handling: Capable of handling significant drain current (I_D).
• Robust Thermal Performance: Designed to operate efficiently across a wide temperature range.
• Avalanche Energy Rated: Ensures durability under transient voltage conditions.

Applications

The 56 200 MOSFET is versatile and can be used in a variety of applications, including but not limited to:

• Power Supplies: DC-DC converters, SMPS, and voltage regulation circuits.
• Motor Control: H-bridge configurations, brushed and brushless motor drivers.
• Automotive Systems: Electronic control units (ECUs), LED drivers, and battery management.
• Industrial Equipment: Inverters, relays, and high-power switching systems.
• Consumer Electronics: Power management in laptops, smartphones, and other portable devices.
• Renewable Energy: Solar inverters and charge controllers.

Electrical Characteristics

The following tables outline the key electrical parameters for the 56 200 MOSFET under specified test conditions.

Absolute Maximum Ratings

• Drain-Source Voltage (V_DSS): 200V
• Gate-Source Voltage (V_GS): ±20V
• Drain Current (I_D): 56A (continuous), 168A (pulsed)
• Total Power Dissipation (P_D): 300W (at 25°C)
• Operating Junction Temperature (T_J): -55°C to +175°C
• Storage Temperature (T_stg): -55°C to +175°C

Static Electrical Characteristics

• Threshold Voltage (V_GS(th)): 2V to 4V (at I_D = 250µA)
• On-State Resistance (R_DS(on)): 0.025Ω (max) at V_GS = 10V, I_D = 28A
• Gate-Source Leakage Current (I_GSS): ±100nA (max) at V_GS = ±20V
• Drain-Source Leakage Current (I_DSS): 10µA (max) at V_DS = 200V, V_GS = 0V

Dynamic Electrical Characteristics

• Input Capacitance (C_iss): 3000pF (typ) at V_DS = 25V, V_GS = 0V
• Output Capacitance (C_oss): 1000pF (typ) at V_DS = 25V, V_GS = 0V
• Reverse Transfer Capacitance (C_rss): 100pF (typ) at V_DS = 25V, V_GS = 0V
• Turn-On Delay Time (t_d(on)): 10ns (typ) at V_DD = 100V, I_D = 28A, R_G = 10Ω
• Turn-Off Delay Time (t_d(off)): 30ns (typ) at V_DD = 100V, I_D = 28A, R_G = 10Ω

Package Information

The 56 200 MOSFET is available in a TO-247 package, which provides excellent thermal and electrical performance. The package is designed for high-power applications and features a low thermal resistance junction-to-case (R_θJC) for efficient heat dissipation.

Package Dimensions (TO-247)

• Length: 20.6mm (max)
• Width: 15.6mm (max)
• Height: 5.1mm (max)
• Lead Pitch: 5.45mm (typ)
• Mounting Hole Diameter: 3.5mm (typ)

Thermal Characteristics

• Junction-to-Case Thermal Resistance (R_θJC): 0.5°C/W (max)
• Junction-to-Ambient Thermal Resistance (R_θJA): 40°C/W (max)

Conclusion

The 56 200 N-channel enhancement mode MOSFET is a high-performance component suitable for a broad range of power switching and amplification applications. With its low R_DS(on), high current capability, and robust thermal characteristics, it is an excellent choice for designers seeking efficiency and reliability in their circuits. The TO-247 package ensures optimal thermal management, making it ideal for high-power environments.