Technical Summary: 62 100 N-Channel Enhancement Mode Logic MOSFET

Overview

The 62 100 is an N-channel enhancement mode logic MOSFET designed for high-efficiency switching applications. This component is optimized for low-voltage, high-speed operations, making it suitable for a wide range of digital and power management applications. The MOSFET features low on-resistance (R_DS(on)) and fast switching characteristics, ensuring minimal power loss and improved thermal performance.

With its compact design and robust construction, the 62 100 is ideal for integration into space-constrained electronic systems, including portable devices, power supplies, and motor control circuits. Its logic-level gate drive compatibility allows for direct interfacing with microcontrollers and other low-voltage control circuits.

Features

• N-Channel Enhancement Mode: Designed for logic-level gate drive compatibility (typically 5V).
• Low On-Resistance (R_DS(on)): Minimizes conduction losses for improved efficiency.
• Fast Switching Speed: Optimized for high-frequency applications.
• Low Threshold Voltage (V_GS(th)): Ensures reliable operation with low-voltage control signals.
• High Current Handling: Capable of supporting moderate to high drain currents.
• ESD Protection: Built-in electrostatic discharge protection for enhanced reliability.
• Compact Package: Available in industry-standard SMD and through-hole packages for easy integration.

Applications

The 62 100 MOSFET is widely used in various electronic systems due to its versatile performance characteristics. Key applications include:

• Power Management: DC-DC converters, voltage regulators, and load switches.
• Motor Control: H-bridge circuits, PWM motor drivers, and servo controllers.
• Digital Logic Circuits: Level shifting, signal switching, and logic gate interfacing.
• Portable Electronics: Battery-powered devices, smartphones, and tablets.
• Automotive Systems: LED drivers, power distribution modules, and infotainment systems.
• Industrial Automation: Relay replacements, solenoid drivers, and PLC I/O modules.

Electrical Characteristics

The following table summarizes the key electrical specifications of the 62 100 MOSFET under standard operating conditions (T_A = 25°C unless otherwise noted):

Absolute Maximum Ratings

• Drain-Source Voltage (V_DS): 60V
• Gate-Source Voltage (V_GS): ±20V
• Continuous Drain Current (I_D): 10A
• Pulsed Drain Current (I_DM): 30A
• Power Dissipation (P_D): 50W
• Operating Junction Temperature (T_J): -55°C to +150°C
• Storage Temperature (T_STG): -55°C to +175°C

Static Electrical Characteristics

• Threshold Voltage (V_GS(th)): 1.0V to 2.5V (V_DS = V_GS, I_D = 250µA)
• On-Resistance (R_DS(on)): 0.1Ω max (V_GS = 10V, I_D = 5A)
• Gate-Source Leakage Current (I_GSS): ±100nA (V_GS = ±20V)
• Drain-Source Leakage Current (I_DSS): 1µA (V_DS = 60V, V_GS = 0V)

Dynamic Electrical Characteristics

• Input Capacitance (C_iss): 500pF (V_DS = 25V, V_GS = 0V, f = 1MHz)
• Output Capacitance (C_oss): 200pF (V_DS = 25V, V_GS = 0V, f = 1MHz)
• Reverse Transfer Capacitance (C_rss): 50pF (V_DS = 25V, V_GS = 0V, f = 1MHz)
• Turn-On Delay Time (t_d(on)): 10ns (V_DD = 30V, I_D = 5A, R_G = 10Ω)
• Turn-Off Delay Time (t_d(off)): 15ns (V_DD = 30V, I_D = 5A, R_G = 10Ω)
• Rise Time (t_r): 20ns (V_DD = 30V, I_D = 5A, R_G = 10Ω)
• Fall Time (t_f): 25ns (V_DD = 30V, I_D = 5A, R_G = 10Ω)

Package Information

The 62 100 MOSFET is available in multiple industry-standard packages to accommodate different assembly and thermal management requirements. Below are the key package details:

TO-220 Package

• Package Type: Through-hole, 3-pin TO-220
• Dimensions: 10.0mm x 15.0mm x 4.5mm (L x W x H)
• Pin Configuration:
  • Pin 1: Gate (G)
  • Pin 2: Drain (D)
  • Pin 3: Source (S)
• Thermal Resistance (Junction-to-Ambient): 62°C/W
• Mounting: Requires heatsink for high-power applications

SOT-23 Package

• Package Type: Surface-mount, 3-pin SOT-23
• Dimensions: 2.9mm x 1.3mm x 1.0mm