81 60 Datasheet | Next Electromics

Technical Summary: 81 60 N-Channel Enhancement Mode MOSFET

Overview

The 81 60 is an N-channel enhancement mode MOSFET designed for high-efficiency switching applications. This component offers low on-state resistance, high-speed switching capabilities, and robust performance in a variety of circuit configurations. It is suitable for both industrial and consumer electronics applications where power efficiency and reliability are critical.

This MOSFET is characterized by its ability to handle moderate to high voltage and current levels, making it ideal for power management tasks such as DC-DC converters, motor control, and load switching. The enhancement mode operation ensures that the device remains off when no gate voltage is applied, providing inherent safety in many applications.

Features

N-Channel Enhancement Mode: Ensures the device is normally off and requires a positive gate voltage to conduct.
Low On-State Resistance (R_DS(on)): Minimizes power loss and improves efficiency in switching applications.
High-Speed Switching: Optimized for fast switching transitions, reducing switching losses.
High Voltage Tolerance: Capable of handling significant drain-to-source voltages, making it suitable for power applications.
Low Gate Charge: Reduces drive requirements and improves switching performance.
Robust Thermal Performance: Designed to operate efficiently under varying thermal conditions.
ESD Protection: Built-in protection against electrostatic discharge, enhancing reliability.

Applications

The 81 60 MOSFET is versatile and can be used in a wide range of applications, including but not limited to:

Power Supplies: DC-DC converters, switch-mode power supplies (SMPS), and voltage regulators.
Motor Control: H-bridge circuits, brushed and brushless motor drivers.
Load Switching: High-side and low-side switching for industrial and automotive systems.
Lighting: LED drivers and dimming circuits.
Consumer Electronics: Battery management systems, portable devices, and power amplifiers.
Automotive Systems: Electric vehicle power systems, infotainment, and lighting controls.

Electrical Characteristics

The following table summarizes the key electrical characteristics of the 81 60 MOSFET under typical operating conditions (unless otherwise specified):

Absolute Maximum Ratings

Drain-to-Source Voltage (V_DSS): [Insert value] V
Gate-to-Source Voltage (V_GSS): ±[Insert value] V
Continuous Drain Current (I_D): [Insert value] A
Pulsed Drain Current (I_DM): [Insert value] A
Power Dissipation (P_D): [Insert value] W
Operating Junction Temperature (T_J): -[Insert value]°C to +[Insert value]°C
Storage Temperature (T_stg): -[Insert value]°C to +[Insert value]°C

Static Electrical Characteristics

Threshold Voltage (V_GS(th)): [Insert value] V (at I_D = [Insert value] mA)
On-State Resistance (R_DS(on)): [Insert value] Ω (at V_GS = [Insert value] V, I_D = [Insert value] A)
Gate-to-Source Leakage Current (I_GSS): [Insert value] nA (at V_GS = ±[Insert value] V)
Drain-to-Source Leakage Current (I_DSS): [Insert value] µA (at V_DS = [Insert value] V, V_GS = 0 V)

Dynamic Electrical Characteristics

Input Capacitance (C_iss): [Insert value] pF (at V_DS = [Insert value] V, V_GS = 0 V, f = [Insert value] MHz)
Output Capacitance (C_oss): [Insert value] pF (at V_DS = [Insert value] V, V_GS = 0 V, f = [Insert value] MHz)
Reverse Transfer Capacitance (C_rss): [Insert value] pF (at V_DS = [Insert value] V, V_GS = 0 V, f = [Insert value] MHz)
Turn-On Delay Time (t_d(on)): [Insert value] ns (at V_DD = [Insert value] V, I_D = [Insert value] A, R_G = [Insert value] Ω)
Turn-Off Delay Time (t_d(off)): [Insert value] ns (at V_DD = [Insert value] V, I_D = [Insert value] A, R_G = [Insert value] Ω)
Rise Time (t_r): [Insert value] ns (at V_DD = [Insert value] V, I_D = [Insert value] A, R_G = [Insert value] Ω)
Fall Time (t_f): [Insert value] ns (at V_DD = [Insert value] V, I_D = [Insert value] A, R_G = [Insert value] Ω)

Package Information

The 81 60 MOSFET is available in a standard package designed for easy integration into various circuit designs. Below are the key package details: