BD707, BD709, BD711 NPN Power Transistor Technical Summary

Overview

The BD707, BD709, and BD711 are silicon epitaxial-base NPN power transistors designed for high-power amplification and switching applications. These transistors are housed in a robust Jedec TO-220 plastic package, making them suitable for a wide range of industrial and consumer electronics applications. With their high current and voltage handling capabilities, these devices are ideal for power supply circuits, motor control, and audio amplification.

Key Features

• High Current Capability: Capable of handling collector currents up to 8A, making them suitable for high-power applications.
• High Voltage Tolerance: Collector-emitter voltage (V_CEO) ratings up to 100V, ensuring reliable operation in high-voltage circuits.
• Low Saturation Voltage: Ensures minimal power loss during switching operations, improving efficiency.
• Fast Switching Speed: Designed for applications requiring rapid switching, such as PWM motor control.
• Thermal Stability: TO-220 package provides excellent thermal dissipation, allowing for sustained high-power operation.
• Complementary PNP Options: Available with complementary PNP transistors (BD708, BD710, BD712) for push-pull configurations.

Applications

The BD707, BD709, and BD711 transistors are versatile components used in a variety of electronic circuits, including:

• Power Supplies: Linear and switching regulators, DC-DC converters.
• Motor Control: H-bridge circuits, PWM motor drivers.
• Audio Amplification: High-power audio output stages in amplifiers.
• Industrial Equipment: Relays, solenoids, and inductive load drivers.
• Lighting Systems: LED drivers and high-power lighting controls.

Electrical Characteristics

Absolute Maximum Ratings

• Collector-Emitter Voltage (V_CEO): 100V (BD707), 80V (BD709), 60V (BD711)
• Collector-Base Voltage (V_CBO): 120V (BD707), 100V (BD709), 80V (BD711)
• Emitter-Base Voltage (V_EBO): 5V
• Collector Current (I_C): 8A (continuous), 12A (peak)
• Power Dissipation (P_tot): 40W (at 25°C case temperature)
• Junction Temperature (T_j): -55°C to +150°C

Thermal Characteristics

• Thermal Resistance, Junction-to-Case (R_th(j-c)): 3.125°C/W
• Thermal Resistance, Junction-to-Ambient (R_th(j-a)): 62.5°C/W

Typical Performance Data

• DC Current Gain (h_FE): 40 to 250 (at I_C = 4A, V_CE = 2V)
• Collector-Emitter Saturation Voltage (V_CE(sat)): 0.5V (max) at I_C = 4A, I_B = 0.4A
• Turn-On Time (t_on): 0.5µs (typical)
• Turn-Off Time (t_off): 1.5µs (typical)

Package Information

TO-220 Package Dimensions

• Package Type: TO-220 (Jedec compliant)
• Mounting Style: Through-hole
• Pin Configuration:
  • Pin 1: Base
  • Pin 2: Collector
  • Pin 3: Emitter
• Dimensions: 10.4mm x 4.6mm x 9.15mm (L x W x H)
• Weight: Approximately 2g

Mechanical and Environmental Specifications

• Material: Molded plastic (UL 94V-0 flammability rating)
• Lead Finish: Matte tin-plated for solderability
• Operating Temperature Range: -55°C to +150°C
• Storage Temperature Range: -55°C to +150°C
• Moisture Sensitivity Level (MSL): MSL 1 (unlimited floor life)

Reliability and Compliance

The BD707, BD709, and BD711 transistors are designed to meet stringent reliability standards and comply with industry regulations, including:

• RoHS Compliance: Lead-free and environmentally friendly.
• REACH Compliance: Compliant with EU REACH regulations.
• Quality Standards: Manufactured under ISO 9001 quality management systems.

Conclusion

The BD707, BD709, and BD711 NPN power transistors offer a robust solution for high-power switching and amplification needs. With their high current and voltage ratings, low saturation voltage, and excellent thermal performance, these transistors are well-suited for demanding applications in power supplies, motor control, and audio systems. The TO-220 package ensures ease of mounting and efficient heat dissipation, making these devices a reliable choice for engineers and designers.