BD826 PNP Power Transistor Technical Summary

Overview

The BD826 is a PNP power transistor designed for high-current and low-voltage applications. Encased in a TO-202 (SOT128B) plastic package, this component is optimized for efficient power management in a variety of electronic circuits. Its robust construction and reliable performance make it suitable for both industrial and consumer applications.

With a maximum collector current of 1 A and a collector-emitter voltage of up to 80 V, the BD826 is ideal for amplification and switching purposes. The transistor's design ensures low saturation voltage and high current gain, contributing to energy-efficient operation.

Features

• High Current Capability: Maximum collector current of 1 A, making it suitable for power applications.
• Low Voltage Operation: Supports collector-emitter voltages up to 80 V, ideal for low-voltage circuits.
• TO-202 (SOT128B) Package: Plastic-encased package ensures durability and efficient heat dissipation.
• PNP Polarity: Designed for applications requiring PNP transistor configurations.
• Low Saturation Voltage: Enhances efficiency in switching applications.
• High Current Gain (hFE): Provides effective signal amplification.

Applications

The BD826 PNP power transistor is versatile and can be used in a wide range of electronic circuits. Below are some common applications:

• Power Amplification: Used in audio amplifiers and signal processing circuits where high current gain is required.
• Switching Circuits: Ideal for relay drivers, motor control, and other switching applications due to its low saturation voltage.
• Voltage Regulation: Employed in power supply circuits to regulate and stabilize voltage levels.
• Industrial Controls: Suitable for automation systems, solenoid drivers, and other industrial control applications.
• Consumer Electronics: Found in devices such as televisions, radios, and home appliances where reliable power management is critical.

Electrical Characteristics

The following table summarizes the key electrical characteristics of the BD826 PNP power transistor under standard operating conditions (unless otherwise specified):

Absolute Maximum Ratings

• Collector-Emitter Voltage (V_CEO): 80 V
• Collector-Base Voltage (V_CBO): 100 V
• Emitter-Base Voltage (V_EBO): 5 V
• Collector Current (I_C): 1 A
• Total Power Dissipation (P_tot): 10 W (at T_amb ≤ 25°C)
• Operating Junction Temperature (T_j): -55°C to +150°C

Thermal Characteristics

• Thermal Resistance, Junction-to-Ambient (R_thJA): 62.5°C/W
• Thermal Resistance, Junction-to-Case (R_thJC): 12.5°C/W

DC Current Gain (h_FE)

• Minimum h_FE at I_C = 500 mA, V_CE = 2 V: 40
• Typical h_FE at I_C = 500 mA, V_CE = 2 V: 100

Package Information

The BD826 is housed in a TO-202 (SOT128B) plastic package, which provides mechanical strength and thermal performance. Below are the key details of the package:

Package Dimensions

• Package Type: TO-202 (SOT128B)
• Mounting Style: Through-hole
• Weight: Approximately 1.1 g
• Lead Material: Copper alloy
• Lead Finish: Tin-plated

Mechanical Drawing

The TO-202 package has the following dimensions (typical values):

• Total Height: 9.65 mm
• Body Width: 5.2 mm
• Lead Length: 3.8 mm
• Lead Spacing: 2.54 mm (between adjacent leads)

Conclusion

The BD826 PNP power transistor is a reliable and efficient component for high-current, low-voltage applications. Its TO-202 package ensures durability and effective thermal management, while its electrical characteristics make it suitable for a wide range of amplification and switching tasks. Whether used in industrial controls, consumer electronics, or power regulation circuits, the BD826 delivers consistent performance under demanding conditions.