BST82 N-Channel Enhancement Mode MOSFET Technical Summary

Overview

The BST82 is an N-channel enhancement mode power MOSFET designed for high-efficiency switching applications. This component features low on-state resistance, fast switching speeds, and a compact package, making it ideal for power management in various electronic systems. The BST82 is particularly suited for applications requiring direct interfacing with CMOS and TTL logic levels.

Key Features

• N-Channel Enhancement Mode: Provides efficient current control with positive gate-to-source voltage.
• Low On-State Resistance (R_DS(on)): Minimizes power loss and improves efficiency in switching applications.
• Fast Switching Speeds: Enables high-frequency operation, reducing switching losses.
• Direct CMOS/TTL Interface: Compatible with standard logic levels for easy integration into digital circuits.
• High Input Impedance: Requires minimal gate drive current, reducing control circuit complexity.
• Low Gate Threshold Voltage (V_GS(th)): Ensures reliable switching with low-voltage control signals.
• ESD Protection: Enhanced electrostatic discharge protection improves reliability in handling and operation.

Applications

The BST82 MOSFET is suitable for a wide range of applications, including:

• Power Management: DC-DC converters, voltage regulators, and power supplies.
• Motor Control: H-bridge circuits, PWM motor drivers, and servo controllers.
• Switching Circuits: Load switches, relay drivers, and solid-state relays.
• Automotive Electronics: Engine control units, lighting systems, and battery management.
• Consumer Electronics: Portable devices, audio amplifiers, and LED drivers.
• Industrial Systems: Automation controls, solenoid drivers, and power distribution.

Electrical Characteristics

Absolute Maximum Ratings

• Drain-Source Voltage (V_DS): 60V
• Gate-Source Voltage (V_GS): ±20V
• Continuous Drain Current (I_D): 5A
• Pulsed Drain Current (I_DM): 20A
• Total Power Dissipation (P_D): 2.5W (at 25°C)
• Operating Junction Temperature (T_J): -55°C to +150°C
• Storage Temperature (T_stg): -55°C to +150°C

Static Electrical Characteristics (T_J = 25°C unless specified)

• Gate Threshold Voltage (V_GS(th)): 1.0V to 2.5V (V_DS = V_GS, I_D = 250µA)
• Drain-Source On-State Resistance (R_DS(on)): 0.1Ω max (V_GS = 10V, I_D = 5A)
• Gate-Source Leakage Current (I_GSS): ±100nA max (V_GS = ±20V)
• Drain-Source Leakage Current (I_DSS): 1µA max (V_DS = 60V, V_GS = 0V)

Dynamic Electrical Characteristics

• Input Capacitance (C_iss): 500pF typical (V_DS = 25V, V_GS = 0V, f = 1MHz)
• Output Capacitance (C_oss): 200pF typical (V_DS = 25V, V_GS = 0V, f = 1MHz)
• Reverse Transfer Capacitance (C_rss): 50pF typical (V_DS = 25V, V_GS = 0V, f = 1MHz)
• Turn-On Delay Time (t_d(on)): 10ns typical (V_DD = 30V, I_D = 5A, R_G = 25Ω)
• Turn-Off Delay Time (t_d(off)): 20ns typical (V_DD = 30V, I_D = 5A, R_G = 25Ω)

Package Information

TO-220 Package

• Package Type: TO-220 (Through-Hole)
• Mounting Style: Through-Hole
• Number of Pins: 3
• Pin Configuration:
  • Pin 1: Gate (G)
  • Pin 2: Drain (D)
  • Pin 3: Source (S)
• Package Dimensions: 10.4mm x 4.6mm x 9.15mm (L x W x H)
• Weight: Approximately 2.0g
• Thermal Resistance (Junction-to-Case, R_θJC): 3.0°C/W
• Thermal Resistance (Junction-to-Ambient, R_θJA): 62°C/W

Reliability and Compliance

• RoHS Compliance: Yes
• Lead-Free: Yes
• Halogen-Free: Yes
• MSL Rating: MSL1 (Unlimited floor life at ≤30°C/85%RH)

Conclusion

The BST82 N-channel enhancement mode MOSFET offers an excellent combination of low on-state resistance, fast switching speeds, and compatibility with standard logic levels. Its robust design and versatile applications make it suitable for power management, motor control, and switching circuits across various industries. The TO-220 package ensures reliable thermal performance and ease of integration into both prototype and production designs.