The BU505F is a high-performance, high-voltage switching transistor designed for demanding applications requiring fast switching speeds and robust voltage handling capabilities. This NPN bipolar junction transistor (BJT) is engineered to deliver reliable performance in high-voltage circuits while maintaining excellent switching characteristics.
With its optimized construction, the BU505F offers superior performance in applications such as CRT deflection circuits, switch-mode power supplies, and other high-voltage switching systems. The device features a high breakdown voltage and low saturation voltage, making it particularly suitable for energy-efficient designs.
The BU505F is ideally suited for a wide range of high-voltage applications, including:
The following tables detail the key electrical specifications of the BU505F transistor:
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 1500 | V |
| Collector-Base Voltage | VCBO | 1700 | V |
| Emitter-Base Voltage | VEBO | 7 | V |
| Collector Current (Continuous) | IC | 7.5 | A |
| Base Current (Continuous) | IB | 2.5 | A |
| Total Power Dissipation | Ptot | 100 | W |
| Junction Temperature | Tj | 150 | °C |
| Storage Temperature Range | Tstg | -55 to +150 | °C |
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Thermal Resistance, Junction to Case | Rth(j-c) | 1.25 | °C/W |
| Thermal Resistance, Junction to Ambient | Rth(j-a) | 62.5 | °C/W |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Turn-On Time | ton | IC = 3A, VCC = 400V | - | 0.5 | 1.0 | µs |
| Turn-Off Time | toff | IC = 3A, VCC = 400V | - | 1.5 | 3.0 | µs |
| Storage Time | ts | IC = 3A, VCC = 400V | - | 0.8 | 1.5 | µs |
The BU505F is available in a TO-3P package, which provides excellent thermal performance and mechanical robustness. The package details are as follows:
The package dimensions are as follows (typical values):