IRFP250

IRFP250 - Third Generation Power MOSFET

Overview

The IRFP250 is a third-generation N-channel Power MOSFET from Vishay, designed to provide an optimal combination of fast switching, ruggedized device design, and low on-resistance. This component is engineered for high-performance power applications, offering superior efficiency and reliability. With its robust construction and advanced technology, the IRFP250 is suitable for a wide range of industrial, automotive, and power supply applications.

Features

• Dynamic dV/dt Rating: Ensures reliable performance under high-voltage transient conditions.
• Repetitive Avalanche Rated: Capable of withstanding repetitive avalanche events, enhancing durability in harsh environments.
• Isolated Central Mounting Hole: Simplifies mechanical assembly and improves thermal management.
• Fast Switching: Enables high-frequency operation, reducing switching losses in power conversion applications.
• Ease of Paralleling: Designed for seamless parallel operation, allowing for higher current handling in multi-device configurations.
• Simple Drive Requirements: Compatible with standard gate drive circuits, reducing design complexity.
• RoHS Compliance: Meets the environmental standards set by Directive 2002/95/EC, ensuring lead-free construction.

Applications

The IRFP250 is versatile and well-suited for a variety of high-power applications, including:

• Switching Power Supplies: Efficiently handles high-current switching in AC/DC and DC/DC converters.
• Motor Control: Ideal for driving motors in industrial automation, robotics, and automotive systems.
• Inverters: Used in solar inverters, UPS systems, and other power conversion applications.
• Audio Amplifiers: Provides high-current switching for Class D audio amplifiers.
• Industrial Equipment: Suitable for welding machines, power tools, and other heavy-duty applications.

Electrical Characteristics

The IRFP250 exhibits the following key electrical parameters under typical operating conditions:

• Drain-Source Voltage (V_DSS): 200V
• Continuous Drain Current (I_D): 30A at 25°C
• Pulsed Drain Current (I_DM): 120A
• Gate-Source Voltage (V_GS): ±20V
• On-Resistance (R_DS(on)): 0.085Ω (max) at V_GS = 10V, I_D = 16A
• Total Power Dissipation (P_D): 190W at 25°C
• Input Capacitance (C_iss): 3200pF (typical)
• Output Capacitance (C_oss): 800pF (typical)
• Reverse Transfer Capacitance (C_rss): 200pF (typical)
• Turn-On Delay Time (t_d(on)): 14ns (typical)
• Turn-Off Delay Time (t_d(off)): 60ns (typical)

Package Information

The IRFP250 is housed in a TO-247AC package, which offers excellent thermal and electrical performance. Key package details include:

• Package Type: TO-247AC (Through-Hole)
• Mounting Style: Screw or clip mounting with an isolated central hole for secure attachment to heatsinks.
• Termination: Three leads (Gate, Drain, Source) with standard pin spacing.
• Thermal Resistance (Junction-to-Case, R_θJC): 0.83°C/W
• Thermal Resistance (Junction-to-Ambient, R_θJA): 62°C/W (without heatsink)
• Weight: Approximately 3.1 grams
• Operating Temperature Range: -55°C to +175°C

Reliability and Compliance

The IRFP250 is designed to meet stringent industry standards for reliability and environmental compliance. Key certifications and qualifications include:

• RoHS Compliance: Fully compliant with Directive 2002/95/EC, ensuring lead-free and environmentally friendly construction.
• AEC-Q101 Qualified: Suitable for automotive applications requiring high reliability.
• UL Recognition: Recognized under UL File E69938, ensuring safety and performance in end-use applications.

Design Considerations

When integrating the IRFP250 into a circuit, the following design considerations should be taken into account:

• Gate Drive Requirements: A gate drive voltage of 10V is recommended for optimal R_DS(on) performance. Avoid exceeding the ±20V limit to prevent gate oxide damage.
• Thermal Management: Due to its high power dissipation capability, proper heatsinking is essential. Use thermal interface materials to minimize junction-to-case thermal resistance.
• Paralleling Devices: When paralleling multiple IRFP250s, ensure balanced current sharing by matching gate drive characteristics and using individual gate resistors.
• Snubber Circuits: In high-frequency switching applications, consider adding snubber circuits to dampen voltage spikes and reduce EMI.

Conclusion

The IRFP250 is a high-performance Power MOSFET that delivers fast switching, low on-resistance, and robust avalanche capability. Its versatile TO-247AC package and compliance with industry standards make it an excellent choice for demanding power electronics applications. Whether used in motor drives, inverters, or power supplies, the IRFP250 provides reliable operation and efficient power handling.