1N5817 Schottky Barrier Diode

Overview

The 1N5817 is a Schottky barrier diode fabricated using planar technology and encapsulated in a hermetically sealed SOD81 glass package. Designed for high-efficiency applications, this diode offers superior switching performance with minimal losses, making it ideal for power supply, reverse polarity protection, and high-frequency rectification circuits. Its robust construction and guard ring protection ensure reliable operation in demanding environments.

Features

• Low Switching Losses: Optimized for high-speed switching applications, reducing energy dissipation.
• Fast Recovery Time: Enables efficient operation in high-frequency circuits.
• Guard Ring Protected: Enhances reliability by preventing edge breakdown and leakage currents.
• Hermetically Sealed Leaded Glass Package (SOD81): Provides excellent environmental protection and mechanical stability.
• Low Forward Voltage Drop: Improves efficiency by minimizing power loss during conduction.
• High Surge Current Capability: Withstands transient overload conditions.

Applications

The 1N5817 Schottky diode is widely used in various electronic circuits due to its fast switching and low-loss characteristics. Key applications include:

• Power Supply Rectification: Used in switch-mode power supplies (SMPS) and DC-DC converters.
• Reverse Polarity Protection: Safeguards sensitive circuits from damage due to incorrect power connections.
• High-Frequency Circuits: Suitable for RF detectors, mixers, and clamping applications.
• Freewheeling Diodes: Protects inductive loads by providing a path for current decay.
• Battery Charging Circuits: Ensures efficient energy transfer with minimal losses.

Electrical Characteristics

The following table summarizes the key electrical parameters of the 1N5817 Schottky diode under standard operating conditions (unless otherwise specified):

Absolute Maximum Ratings

• Peak Repetitive Reverse Voltage (V_RRM): 20V
• Average Forward Current (I_F): 1A
• Non-Repetitive Peak Forward Surge Current (I_FSM): 25A (8.3ms single half-sine wave)
• Operating Junction Temperature Range (T_J): -65°C to +125°C
• Storage Temperature Range (T_STG): -65°C to +150°C

Electrical Characteristics (T_A = 25°C unless noted)

• Forward Voltage Drop (V_F): 0.45V (typical) at I_F = 1A
• Reverse Leakage Current (I_R): 0.5mA (maximum) at V_R = 20V
• Junction Capacitance (C_J): 50pF (typical) at V_R = 0V, f = 1MHz
• Thermal Resistance (R_θJA): 75°C/W (junction to ambient)

Package Information

The 1N5817 is housed in a SOD81 hermetically sealed glass package, which provides excellent protection against environmental factors such as moisture and contaminants. The package is designed for through-hole mounting and features the following mechanical specifications:

Package Dimensions

• Body Length: 3.8mm (max)
• Body Diameter: 1.8mm (max)
• Lead Diameter: 0.45mm (nominal)
• Lead Spacing: 2.54mm (standard)

Package Marking

The device is marked with the part number "1N5817" for identification. The cathode is indicated by a band on the diode body.

Recommended PCB Layout

For optimal thermal and electrical performance, ensure adequate spacing between components and minimize trace lengths to reduce parasitic inductance. A ground plane is recommended for high-frequency applications.

Reliability and Compliance

The 1N5817 meets industry standards for reliability and performance. It is compliant with RoHS directives, ensuring environmentally friendly manufacturing. The hermetically sealed glass package enhances long-term reliability in harsh operating conditions.

Conclusion

The 1N5817 Schottky barrier diode is a high-performance component designed for applications requiring fast switching, low forward voltage drop, and robust environmental protection. Its combination of electrical efficiency and mechanical durability makes it a preferred choice for power management, rectification, and protection circuits across various industries.