PBYR225 Technical Summary

PBYR225: Dual Nickel Silicide Schottky Barrier Diode

Overview

The PBYR225 is a high-performance dual nickel silicide Schottky barrier diode designed for applications requiring low forward voltage drop and fast switching capabilities. This component is optimized for efficiency and reliability in power management circuits, making it suitable for a wide range of industrial and consumer electronics applications. The dual-diode configuration allows for compact circuit designs while maintaining excellent thermal and electrical performance.

Key Features

Dual Diode Configuration: Two independent Schottky barrier diodes in a single package for space-saving designs.
Low Forward Voltage Drop: Typically 0.38V at 1A, reducing power losses and improving efficiency.
Fast Switching: Ultra-low reverse recovery time enables high-frequency operation.
High Current Capability: Continuous forward current rating of 2A per diode.
Nickel Silicide Technology: Provides stable performance and enhanced reliability.
Low Leakage Current: Minimizes power loss in off-state conditions.
Excellent Thermal Performance: Low thermal resistance package for improved heat dissipation.

Applications

The PBYR225 is versatile and finds use in numerous applications including:

Power supply circuits (DC-DC converters, SMPS)
Reverse polarity protection
OR-ing diode applications
Freewheeling diodes in switching circuits
Voltage clamping circuits
Battery charging circuits
Solar power systems
Automotive electronics
Consumer electronics (TVs, audio systems, etc.)

Electrical Characteristics

(Values measured at T_j = 25°C unless otherwise specified)

Absolute Maximum Ratings

Repetitive Peak Reverse Voltage (V_RRM): 25V
Average Forward Current (I_F(AV)): 2A per diode
Peak Forward Surge Current (I_FSM): 30A (single pulse, 8.3ms)
Junction Temperature Range (T_j): -55°C to +125°C
Storage Temperature Range (T_stg): -55°C to +150°C

Thermal Characteristics

Thermal Resistance, Junction to Ambient (R_θJA): 75°C/W
Thermal Resistance, Junction to Case (R_θJC): 15°C/W

Static Electrical Characteristics

Forward Voltage (V_F): 0.38V (typ) at I_F = 1A
Reverse Leakage Current (I_R): 50μA (max) at V_R = 25V
Reverse Breakdown Voltage (V_BR): 30V (min)

Dynamic Characteristics

Junction Capacitance (C_j): 50pF (typ) at V_R = 0V, f = 1MHz
Reverse Recovery Time (t_rr): 5ns (typ)

Package Information

The PBYR225 is available in a compact, surface-mount SOD-123 package that offers excellent thermal and electrical performance while minimizing board space requirements.

SOD-123 Package Dimensions

Package Type: SOD-123 (Small Outline Diode)
Body Length: 2.65mm (max)
Body Width: 1.7mm (max)
Body Height: 1.3mm (max)
Lead Pitch: 1.8mm (nominal)
Termination: Matte tin-plated leads, solderable per MIL-STD-202, Method 208
Weight: Approximately 0.008 grams

Marking Information

The package is marked with the following identification:

Top side: "225" as device identification code
Cathode indicated by a band on one end of the package

Recommended PCB Land Pattern

For optimal performance and reliability, the following land pattern is recommended:

Pad width: 1.0mm
Pad length: 1.5mm
Pad-to-pad spacing: 1.8mm (center-to-center)

Reliability and Qualification

The PBYR225 meets or exceeds the following reliability standards:

MIL-STD-750 environmental test methods
JEDEC JESD22-A104 temperature cycling
JESD22-A101 steady-state temperature humidity bias life test
RoHS compliant (2011/65/EU)
REACH compliant (EC 1907/2006)

Handling and Storage

To maintain component reliability:

Store in dry, non-corrosive environment at temperatures between -55°C and +150°C
Use appropriate ESD precautions during handling and assembly
Follow J-STD-033 for moisture sensitivity handling (SOD-123 package is MSL Level 1)
Recommended solder profile per IPC/JEDEC J-STD-020

Ordering Information

The PBYR225 is available in various packaging options:

PBYR225CT: Tape and Reel, 3000 pieces per reel
PBYR225D: Cut Tape, 100 pieces per segment
PBYR225TR: Tape and Reel, 10000 pieces per reel