HM62W1400H 4-Mbit High-Speed Static RAM

Overview

The HM62W1400H is a high-performance 4-Mbit (4M x 1-bit) static RAM (SRAM) designed for applications requiring high-speed and high-density memory. Built using advanced CMOS process technology with a 4-transistor + 2-poly resistor memory cell architecture, this SRAM delivers fast access times while maintaining low power consumption. It is particularly well-suited for cache and buffer memory applications in computing systems, networking equipment, and other high-speed digital systems.

The device is available in two compact surface-mount packages: a 400-mil 32-pin SOJ (Small Outline J-lead) and a 400-mil 32-pin TSOP II (Thin Small Outline Package). These package options make the HM62W1400H ideal for space-constrained designs requiring high-density memory solutions.

Features

• Single 3.3V Power Supply: Operates at 3.3V ± 0.3V, making it compatible with modern low-voltage systems.
• High-Speed Performance: Fast access times of 12ns or 15ns (max) depending on speed grade.
• Fully Static Operation: Does not require clock signals or refresh cycles, simplifying system design.
• Equal Access and Cycle Times: Provides consistent performance for read and write operations.
• TTL Compatibility: All inputs and outputs are directly compatible with TTL logic levels.
• Low Power Consumption:
  • Operating current: 180mA/160mA (max)
  • TTL standby current: 60mA/50mA (max)
  • CMOS standby current: 5mA (max), 1mA (max) for L-version
• Data Retention:
  • Data retention current: 0.6mA (max) for L-version
  • Data retention voltage: 2V (min) for L-version
• Optimized Pinout: Center VCC and VSS type pinout for improved power distribution.

Applications

The HM62W1400H is designed for use in a wide range of high-performance computing and digital systems:

• Cache Memory: Ideal for L2/L3 cache in computing systems due to its fast access times.
• Buffer Memory: Excellent for data buffering in networking equipment and communication systems.
• High-Speed Digital Systems: Suitable for applications requiring fast temporary data storage.
• Embedded Systems: Can be used in industrial controllers, medical equipment, and other embedded applications.
• Graphics Processing: Useful as temporary storage in graphics and video processing systems.

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (VCC): -0.5V to +4.6V
• Input Voltage (VI): -0.5V to VCC + 0.5V
• Output Voltage (VO): -0.5V to VCC + 0.5V
• Operating Temperature Range: 0°C to +70°C (commercial), -40°C to +85°C (industrial)
• Storage Temperature Range: -65°C to +150°C

DC Characteristics (TA = 25°C, VCC = 3.3V ± 0.3V)

• Input High Voltage (VIH): 2.0V min
• Input Low Voltage (VIL): 0.8V max
• Output High Voltage (VOH): 2.4V min (IOH = -4.0mA)
• Output Low Voltage (VOL): 0.4V max (IOL = 8.0mA)
• Input Leakage Current (II): ±1μA max (VCC = 3.6V, VIN = 0V to VCC)
• Output Leakage Current (IOZ): ±1μA max (VCC = 3.6V, VOUT = 0V to VCC)

AC Characteristics

• Read Cycle Time (tRC): 12ns/15ns max
• Address Access Time (tAA): 12ns/15ns max
• Chip Enable Access Time (tACE): 12ns/15ns max
• Output Enable Access Time (tDOE): 6ns max
• Write Cycle Time (tWC): 12ns/15ns max
• Write Pulse Width (tWP): 10ns/12ns min
• Data Setup Time (tDS): 6ns min
• Data Hold Time (tDH): 0ns min

Package Information

32-pin SOJ (400-mil)

• Package Dimensions: 20.95mm x 10.16mm body size
• Lead Pitch: 1.27mm
• Lead Count: 32
• Package Material: Plastic, J-lead configuration
• Moisture Sensitivity Level (MSL): 3

32-pin TSOP II (400-mil)

• Package Dimensions: 20.95mm x 10.16mm body size
• Lead Pitch: 0.8mm
• Lead Count: 32
• Package Material: Plastic, thin small outline
• Moisture Sensitivity Level (MSL): 3

Ordering Information

The HM62W1400H is available in different speed grades and package options:

• HM62W1400H-12: 12ns access time
• HM62W1400H-15: 15ns access time
• Package options:
  • SOJ (Suffix: F)
  • TSOP II (Suffix: T)
• Temperature range options:
  • Commercial (0°C to +70°C)
  • Industrial (-40°C to +85°C)

Conclusion

The HM62W1400H 4-Mbit high-speed static RAM offers an excellent combination of performance, density, and power efficiency for demanding memory applications. With its fast access times, low power consumption in standby modes, and compact packaging options, this SRAM is well-suited for modern digital systems requiring reliable high-speed memory. The device's TTL compatibility and flexible power options make it easy to integrate into a wide variety of system designs, from computing and networking equipment to industrial and embedded applications.