HB52F88EM 8-Byte DIMM Memory Module

Overview

The HB52F88EM, HB52F89EM, HB52F168EN, and HB52F169EN are members of the 8-byte DIMM (Dual In-line Memory Module) family, designed as an optimized main memory solution for 8-byte processor applications. These modules are synchronous Dynamic RAM (SDRAM) modules featuring 64-Mbit SDRAM chips (HM5264805FTT) in TSOP packages, along with a 2-kbit serial EEPROM for Presence Detect (PD) functionality.

The HB52F88EM is specifically organized as 8M × 64 × 1-bank, utilizing 8 pieces of 64-Mbit SDRAM. The module is packaged in a 168-pin socket type configuration with dual lead-out, enabling high-density mounting without requiring surface mount technology. Decoupling capacitors are mounted adjacent to each TSOP on the module board for improved signal integrity.

Features

• Compatibility: Fully compliant with JEDEC standard outline for 8-byte DIMM modules.
• Package: 168-pin socket type (dual lead-out) with dimensions: 133.37 mm (Length) × 34.925 mm (Height) × 4.00 mm (Thickness).
• Power Supply: 3.3V operation.
• Clock Frequency: Maximum of 133 MHz.
• Interface: LVTTL.
• Data Bus Width:
  • ×64 Non-parity (HB52F88EM, HB52F168EN)
  • ×72 ECC (HB52F89EM, HB52F169EN)
• Memory Control: Single pulsed RAS (Row Address Strobe).
• Bank Architecture: 4 banks capable of simultaneous and independent operation.
• Burst Operations: Supports burst read/write and burst read/single write operations.
• Programmable Burst Length: Configurable as 1, 2, 4, 8, or full page.
• Burst Sequence: Supports sequential and interleave modes.
• CAS Latency: Programmable with:
  • 3 cycles at 133 MHz
  • 2 cycles at 100 MHz
• Byte Control: Managed via DQMB (Data Mask Byte) signals.
• Refresh Cycles: 4096 refresh cycles every 64 ms.
• Refresh Modes: Supports auto-refresh and self-refresh.
• Full Page Burst: Capable of sequential burst operations with burst stop functionality.

Applications

The HB52F88EM and its related modules are ideal for use in systems requiring high-density, high-performance memory solutions. Typical applications include:

• Workstations and servers requiring 8-byte memory architectures.
• High-performance computing systems with 64-bit or 72-bit (ECC) data buses.
• Embedded systems where reliable, high-speed memory is critical.
• Industrial computing applications requiring robust memory solutions.

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (V_DD): -0.5V to +4.6V
• Input Voltage (V_IN): -0.5V to V_DD + 0.5V
• Operating Temperature: 0°C to +70°C (commercial grade)
• Storage Temperature: -55°C to +125°C

Recommended Operating Conditions

• Supply Voltage (V_DD): 3.3V ± 0.3V
• Clock Frequency: Up to 133 MHz (with CAS latency = 3) or 100 MHz (with CAS latency = 2)
• Input High Voltage (V_IH): 2.0V min
• Input Low Voltage (V_IL): 0.8V max

Power Consumption

• Active Current (I_DD): TBD (varies based on clock frequency and operational mode)
• Standby Current (I_SB): TBD (depends on refresh mode and temperature)

Package Information

Physical Dimensions

• Module Length: 133.37 mm
• Module Height: 34.925 mm
• Module Thickness: 4.00 mm
• Lead Pitch: 1.27 mm

Pin Configuration

The 168-pin socket type package features dual lead-out for high-density mounting. Key pin groups include:

• Address Pins (A0-A11): Row and column address inputs.
• Data Pins (DQ0-DQ63/71): 64-bit or 72-bit data bus.
• Control Pins (RAS, CAS, WE): Memory control signals.
• Clock Pins (CLK): Synchronous clock input.
• Power/Ground Pins (V_DD, V_SS): Distributed for stable power delivery.

Ordering Information

The HB52F88EM series includes multiple variants with distinct configurations:

• HB52F88EM-75F: 8M × 64 × 1-bank, non-ECC, 133 MHz operation.
• HB52F89EM-75F: 8M × 72 × 1-bank, ECC, 133 MHz operation.
• HB52F168EN-75F: 8M × 64 × 2-bank, non-ECC, 133 MHz operation.
• HB52F169EN-75F: 8M × 72 × 2-bank, ECC, 133 MHz operation.

Note: 100 MHz operation is supported with CAS latency = 2.