HB52F169EN 8-Byte DIMM Synchronous DRAM Module

Overview

The HB52F169EN is a high-performance 8-byte DIMM (Dual In-line Memory Module) belonging to the HB52F series, designed as an optimized main memory solution for 8-byte processor applications. This synchronous DRAM module integrates 64-Mbit SDRAMs (HM5264805FTT) in TSOP packages and includes a 2-kbit serial EEPROM for Presence Detect (PD) functionality. The module is organized as 8M × 72 × 2-bank, utilizing 18 pieces of 64-Mbit SDRAM chips. It is housed in a 168-pin socket-type package, enabling high-density mounting without requiring surface-mount technology.

Features

• Compatibility: Fully compliant with JEDEC standard 8-byte DIMM specifications.
• Package: 168-pin socket type (dual lead-out) with dimensions: 133.37 mm (Length) × 34.925 mm (Height) × 4.00 mm (Thickness).
• Power Supply: 3.3V operation.
• Clock Frequency: Supports up to 133 MHz (maximum).
• Interface: LVTTL-compatible.
• Data Bus Width: ×72 with ECC (Error Correction Code) support.
• Bank Architecture: 4 banks capable of simultaneous and independent operation.
• Burst Operations: Supports burst read/write and burst read/single write operations.
• Programmable Burst Length: Configurable as 1, 2, 4, 8, or full page.
• Burst Sequence: Supports sequential and interleave modes.
• CAS Latency: Programmable as 3 (for 133 MHz) or 2 (for 100 MHz).
• Byte Control: Managed via DQMB signals.
• Refresh Cycles: 4096 refresh cycles per 64 ms.
• Refresh Modes: Auto-refresh and self-refresh support.
• Full Page Burst: Capable of sequential burst operations with burst stop functionality.

Applications

The HB52F169EN is designed for high-performance computing and embedded systems requiring reliable and high-speed memory solutions. Typical applications include:

• Server and workstation memory expansion.
• High-performance computing systems.
• Embedded systems requiring ECC support.
• Industrial computing applications.
• Networking equipment with stringent memory reliability requirements.

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (V_DD): -0.5V to +4.6V
• Input Voltage (V_IN): -0.5V to V_DD + 0.5V
• Operating Temperature: 0°C to +70°C (commercial grade)
• Storage Temperature: -55°C to +125°C

Recommended Operating Conditions

• Supply Voltage (V_DD): 3.3V ± 0.3V
• Clock Frequency: Up to 133 MHz (CAS Latency = 3) or 100 MHz (CAS Latency = 2)
• Input High Voltage (V_IH): 2.0V min
• Input Low Voltage (V_IL): 0.8V max

Timing Parameters

• t_CK (Clock Cycle Time): 7.5 ns (133 MHz) / 10 ns (100 MHz)
• t_RCD (RAS to CAS Delay): 20 ns
• t_RP (RAS Precharge Time): 20 ns
• t_AC (Access Time from Clock): 5.4 ns

Package Information

Physical Dimensions

• Module Length: 133.37 mm
• Module Height: 34.925 mm
• Module Thickness: 4.00 mm
• Lead Pitch: 1.27 mm

Pin Configuration

The 168-pin socket-type package features dual lead-out for high-density mounting. The pinout includes:

• 64/72 data lines (DQ₀ to DQ₇₁)
• Address inputs (A₀ to A₁₁)
• Bank select signals (BA₀ and BA₁)
• Control signals (RAS, CAS, WE, CS)
• Clock inputs (CLK)
• Power and ground pins (V_DD, V_SS)

Thermal Considerations

The module includes decoupling capacitors mounted beside each TSOP to minimize noise and ensure stable operation. Proper airflow is recommended for thermal management in high-performance environments.

Ordering Information

The HB52F169EN is available in multiple configurations, including speed grades and CAS latency options. For detailed part numbers and ordering options, refer to the manufacturer's datasheet.