K4F660812C - 8Mx8 Fast Page Mode DRAM

Overview

The K4F660812C is an 8Mx8 Fast Page Mode Dynamic Random Access Memory (DRAM) component manufactured by Samsung Electronics Co., Ltd. This high-performance memory device is designed for applications requiring high bandwidth, low power consumption, and reliable operation. Fabricated using Samsung's advanced CMOS process, the K4F660812C supports multiple refresh modes, including CAS-before-RAS, RAS-only, Hidden refresh, and Self-refresh (L-version only). It is compatible with LVTTL (3.3V) logic levels and is available in industry-standard plastic SOJ and TSOP(II) packages.

Features

• Fast Page Mode Operation: Enables high-speed data access by allowing multiple column accesses within the same row without repeated row addressing.
• Multiple Refresh Capabilities: Supports CAS-before-RAS (CBR), RAS-only, and Hidden refresh modes for efficient memory management.
• Self-Refresh Capability (L-version only): Reduces power consumption by allowing the device to refresh its contents autonomously during standby.
• Fast Parallel Test Mode: Facilitates rapid testing during manufacturing and quality assurance processes.
• LVTTL (3.3V) Compatibility: Ensures seamless integration with modern low-voltage systems.
• Flexible Write Options: Supports Early Write and Output Enable Controlled Write modes for versatile data handling.
• JEDEC Standard Pinout: Guaranteed compatibility with industry-standard designs and layouts.
• Package Options: Available in Plastic SOJ and TSOP(II) packages for diverse application requirements.
• Power Supply: Operates at +3.3V ±0.3V, making it suitable for low-power applications.

Applications

The K4F660812C is ideal for a wide range of applications, including but not limited to:

• Computing Systems: Used in desktops, laptops, and servers for temporary data storage.
• Networking Equipment: Suitable for routers, switches, and other high-bandwidth communication devices.
• Embedded Systems: Ideal for industrial control systems, medical devices, and automotive electronics.
• Consumer Electronics: Found in digital TVs, set-top boxes, and gaming consoles.
• Telecommunications: Used in base stations and other telecom infrastructure components.

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (Vcc): -0.5V to +4.6V
• Input Voltage (Vin): -0.5V to Vcc + 0.5V
• Output Voltage (Vout): -0.5V to Vcc + 0.5V
• Operating Temperature Range: 0°C to +70°C (Commercial), -40°C to +85°C (Industrial)
• Storage Temperature Range: -55°C to +150°C

Recommended Operating Conditions

• Supply Voltage (Vcc): +3.3V ±0.3V
• Input High Voltage (Vih): 2.0V min (Vcc = 3.0V)
• Input Low Voltage (Vil): 0.8V max (Vcc = 3.0V)
• Operating Temperature: 0°C to +70°C (Commercial), -40°C to +85°C (Industrial)

DC Electrical Characteristics

• Input Leakage Current (Ili): ±1μA max (Vcc = 3.6V, Vin = 0V to Vcc)
• Output Leakage Current (Ilo): ±1μA max (Vcc = 3.6V, Vout = 0V to Vcc)
• Operating Current (Icc): 120mA max (Active, f = 100MHz)
• Standby Current (Isb): 20mA max (CMOS level inputs, f = 0Hz)

AC Electrical Characteristics

• RAS Access Time (tRAC): 60ns max
• CAS Access Time (tCAC): 15ns max
• RAS Precharge Time (tRP): 30ns min
• CAS Precharge Time (tCP): 20ns min
• Write Pulse Width (tWP): 30ns min
• Refresh Cycle Time (tREF): 64ms max (4K refresh cycles)

Package Information

Plastic SOJ (Small Outline J-Lead) Package

• Package Dimensions: 400mil width, 1.27mm lead pitch
• Pin Count: 32 pins
• Material: Molded plastic, J-lead configuration for surface mounting

TSOP(II) (Thin Small Outline Package) Package

• Package Dimensions: 10.16mm x 20.95mm, 0.5mm lead pitch
• Pin Count: 32 pins
• Material: Thin, molded plastic with gull-wing leads for surface mounting

Functional Block Diagram

The K4F660812C features a memory array organized as 8,388,608 x 8 cells. The control clocks (RAS, CAS, W) manage row and column addressing, while the address inputs (A0~A12) select the desired memory location. The device includes built-in refresh logic to maintain data integrity, with options for CAS-before-RAS, RAS-only, Hidden, and Self-refresh (L-version only) modes.

Conclusion

The K4F660812C 8Mx8 Fast Page Mode DRAM from Samsung Electronics Co., Ltd. is a versatile and high-performance memory solution suitable for a wide range of applications. Its advanced features, including multiple refresh modes, LVTTL compatibility, and flexible write options, make it an excellent choice for designers seeking reliable and efficient memory components. Available in industry-standard packages, the K4F660812C ensures easy integration into existing and new system designs.