HM62W4100H 4-Mbit High-Speed Static RAM

Overview

The HM62W4100H is a high-performance 4-Mbit static RAM (SRAM) organized as 1-Mword × 4-bit. Designed using advanced CMOS process technology (4-transistor + 2-poly resistor memory cell) and high-speed circuit design techniques, this SRAM delivers fast access times, making it ideal for applications requiring high-speed and high-density memory solutions. The device is particularly suited for cache and buffer memory applications in computing systems. The HM62W4100H is available in a 400-mil, 32-pin Small Outline J-lead (SOJ) package, optimized for high-density surface mounting.

Features

• Single Supply Voltage: 3.3 V ± 0.3 V
• High-Speed Access Time: 12 ns or 15 ns (max)
• Completely Static Memory: No clock or timing strobe required
• Equal Access and Cycle Times: Ensures consistent performance
• TTL Compatibility: All inputs and outputs are directly TTL-compatible
• Operating Current: 180 mA (max) for 12 ns version, 160 mA (max) for 15 ns version
• TTL Standby Current: 60 mA (max) for 12 ns version, 50 mA (max) for 15 ns version
• CMOS Standby Current: 5 mA (max) standard, 1 mA (max) for L-version
• Data Retention Current (L-version): 0.6 mA (max)
• Data Retention Voltage (L-version): 2 V (min)
• Center V_CC and V_SS Type Pinout: Optimized for efficient power distribution

Applications

The HM62W4100H is designed for high-performance applications that demand fast and reliable memory access. Key applications include:

• Cache Memory: Provides high-speed data storage for CPU cache in computing systems.
• Buffer Memory: Used in networking and communication equipment to temporarily hold data during transmission.
• Embedded Systems: Suitable for industrial and automotive systems requiring fast SRAM for real-time processing.
• High-Speed Data Logging: Ideal for applications where rapid data capture and retrieval are critical.
• Graphics Processing: Supports frame buffer and texture memory in graphics-intensive applications.

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (V_CC): -0.5 V to +4.6 V
• Input Voltage (V_IN): -0.5 V to V_CC + 0.5 V
• Output Voltage (V_OUT): -0.5 V to V_CC + 0.5 V
• Operating Temperature Range: 0°C to +70°C (commercial), -40°C to +85°C (industrial)
• Storage Temperature Range: -65°C to +150°C

DC Characteristics (V_CC = 3.3 V ± 0.3 V, T_A = 25°C)

• Input High Voltage (V_IH): 2.0 V (min)
• Input Low Voltage (V_IL): 0.8 V (max)
• Output High Voltage (V_OH): 2.4 V (min) at I_OH = -4.0 mA
• Output Low Voltage (V_OL): 0.4 V (max) at I_OL = 8.0 mA
• Input Leakage Current (I_IN): ±1.0 µA (max)
• Output Leakage Current (I_OUT): ±1.0 µA (max)

AC Characteristics

• Read Cycle Time (t_RC): 12 ns / 15 ns (max)
• Write Cycle Time (t_WC): 12 ns / 15 ns (max)
• Address Access Time (t_AA): 12 ns / 15 ns (max)
• Chip Enable Access Time (t_ACE): 12 ns / 15 ns (max)
• Output Enable Access Time (t_OE): 6 ns (max)
• Write Pulse Width (t_WP): 10 ns (min)

Package Information

32-Pin SOJ Package (400-mil)

• Package Dimensions: 20.95 mm × 10.16 mm × 3.81 mm (typical)
• Pin Pitch: 1.27 mm (50 mil)
• Lead Material: Copper alloy with tin plating
• Mounting Style: Surface mount (SOJ)
• Weight: Approximately 1.2 grams

Pin Configuration

• V_CC (Pins 16, 32): Power supply (3.3 V)
• V_SS (Pins 1, 17): Ground
• Address Inputs (A0-A19): 20-bit address bus (pins vary by configuration)
• Data Inputs/Outputs (DQ0-DQ3): 4-bit bidirectional data bus
• Chip Enable (CE): Active-low chip select
• Output Enable (OE): Active-low output enable
• Write Enable (WE): Active-low write control

Ordering Information

The HM62W4100H is available in multiple speed grades and package options. Refer to the manufacturer's datasheet for specific ordering codes and suffixes indicating speed, temperature range, and packaging.