Technical Summary: K4F640411C 5V DRAM

Overview

The K4F640411C is a high-performance 5V Dynamic Random-Access Memory (DRAM) component designed for applications requiring reliable and efficient memory storage. This device features a 4K refresh cycle architecture, making it suitable for systems where power efficiency and data retention are critical. The K4F640411C is part of a broader family of DRAM components, including variants with 8K refresh cycles, providing flexibility for different design requirements.

The device integrates key functional blocks such as row and column decoders, refresh control logic, and data buffers to ensure seamless operation. Its architecture is optimized for both performance and power consumption, making it ideal for embedded systems, industrial applications, and legacy computing platforms.

Features

• Voltage Supply: 5V operation, ensuring compatibility with legacy systems.
• Refresh Cycles: 4K refresh configuration for balanced performance and power efficiency.
• Data Width: 4-bit I/O (DQ0 to DQ3) for efficient data transfer.
• Integrated Control Logic: Includes refresh timer, refresh counter, and address buffers for autonomous operation.
• On-Chip Decoders: Row and column decoders for efficient memory addressing.
• Output Enable (OE) Control: Allows for flexible data bus management.
• VBB Generator: On-chip substrate bias generator for improved noise immunity.
• Package Options: Available in multiple package variants (e.g., JC, TC) to suit different assembly requirements.

Applications

The K4F640411C is designed for a wide range of applications, particularly where 5V memory solutions are required. Key application areas include:

• Embedded Systems: Used in microcontroller-based systems requiring reliable volatile memory.
• Industrial Automation: Suitable for control systems and data logging applications.
• Legacy Computing: Ideal for retro computing and maintenance of older electronic systems.
• Telecommunications: Can be used in networking equipment where 5V DRAM is specified.
• Consumer Electronics: Found in older gaming consoles, printers, and other devices.

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (VCC): -0.5V to +7.0V
• Input Voltage (VI): -0.5V to VCC + 0.5V
• Operating Temperature Range (TA): 0°C to +70°C
• Storage Temperature Range (TSTG): -55°C to +125°C

Recommended Operating Conditions

• Supply Voltage (VCC): 4.5V to 5.5V
• Input High Voltage (VIH): 2.4V min
• Input Low Voltage (VIL): 0.8V max
• Operating Frequency: Up to 70MHz (dependent on configuration)

DC Characteristics

• Standby Current (ISB): 10µA max (at VCC = 5V, TA = 25°C)
• Operating Current (ICC): 50mA typical (active mode)
• Output High Voltage (VOH): 2.4V min (at IOH = -2mA)
• Output Low Voltage (VOL): 0.4V max (at IOL = 2mA)

AC Characteristics

• Access Time (tAA): 70ns max
• Row Precharge Time (tRP): 20ns min
• Refresh Cycle Time (tRC): 64ms max
• Output Enable to Data Valid (tOE): 25ns max

Package Information

The K4F640411C is available in multiple package options to accommodate different design and assembly requirements. Below are the key package details:

JC Package (Plastic SOJ)

• Package Type: 400-mil SOJ (Small Outline J-Lead)
• Pin Count: 28 pins
• Dimensions: 18.41mm x 10.16mm (body)
• Lead Pitch: 1.27mm
• Moisture Sensitivity Level (MSL): MSL 3

TC Package (TSOP Type II)

• Package Type: 400-mil TSOP (Thin Small Outline Package)
• Pin Count: 28 pins
• Dimensions: 18.40mm x 10.16mm (body)
• Lead Pitch: 0.8mm
• Moisture Sensitivity Level (MSL): MSL 3

Functional Block Diagram Description

The K4F640411C integrates several key functional blocks to ensure efficient memory operation:

• Row Decoder: Selects the appropriate row for read/write operations.
• Column Decoder: Manages column addressing for data access.
• Refresh Control: Includes a refresh timer and counter to maintain data integrity.
• Sense Amps & I/O: Amplifies and buffers data during read/write cycles.
• Data Buffers: DQ0 to DQ3 provide the 4-bit data interface.
• VBB Generator: Generates substrate bias voltage for noise reduction.

Conclusion

The K4F640411C is a versatile 5V DRAM component offering a balance of performance, power efficiency, and reliability. With its 4K refresh architecture and robust feature set, it is well-suited for a variety of legacy and embedded applications. Designers can choose between multiple package options to best fit their assembly and space requirements. This component remains a viable solution for systems where 5V memory is essential.