HB52R1289E22 Technical Summary

HB52R1289E22 64M × 72 × 2-Bank Synchronous DRAM Module Technical Summary

Overview

The HB52R1289E22 is a high-performance 8-byte DIMM (Dual In-line Memory Module) designed as an optimized main memory solution for 8-byte processor applications. This module integrates advanced memory technology to deliver reliable performance in demanding computing environments.

This synchronous DRAM module features a 64M × 72 × 2-bank architecture, incorporating 36 pieces of 256-Mbit SDRAM (HM5225405BTB) in TCP package, along with supporting components including a PLL clock driver, register drivers, and serial EEPROM for Presence Detect functionality.

Key Features

Fully compliant with JEDEC standard outline for 8-byte DIMM
Compatible with Intel PCB Reference design (Rev. 1.2)
168-pin socket type package with dual lead out configuration
3.3V power supply with LVTTL interface
Maximum clock frequency of 100 MHz
72-bit data bus width with ECC support
Single pulsed RAS operation
Four independently operable banks
Programmable burst lengths: 1, 2, 4, or 8
Two burst sequence variations: Sequential and Interleave
Programmable CAS latency options (3/4 for -A6B, 4 for -B6B)
Byte control via DQMB signals
8192 refresh cycles per 64ms refresh period
Supports both auto refresh and self refresh modes

Applications

The HB52R1289E22 is designed for use in high-performance computing systems requiring reliable, high-density memory solutions:

Enterprise servers and workstations
High-performance computing clusters
Data center infrastructure
Telecommunications equipment
Industrial computing systems
Mission-critical applications requiring ECC memory

Electrical Characteristics

Absolute Maximum Ratings

Supply voltage (VDD): -0.5V to +4.6V
Input voltage (VI): -0.5V to VDD+0.5V
Output voltage (VO): -0.5V to VDD+0.5V
Operating temperature: 0°C to +70°C
Storage temperature: -55°C to +125°C

Recommended Operating Conditions

Supply voltage (VDD): 3.3V ±0.3V
Input high voltage (VIH): 2.0V min
Input low voltage (VIL): 0.8V max
Operating temperature range: 0°C to +70°C

DC Characteristics

Input leakage current: ±1μA max
Output leakage current: ±1μA max
Active operating current: TBD mA typ
Standby current: TBD mA typ
Self refresh current: TBD mA typ

Package Information

Physical Dimensions

Package type: 168-pin socket type (dual lead out)
Length: 133.37 mm
Height: 38.10 mm
Thickness: 4.80 mm
Lead pitch: 1.27 mm
Contact pad: Gold

Pin Configuration

The HB52R1289E22 features a 168-pin configuration with key pins including:

Power supply pins (VDD, VDDQ)
Ground pins (VSS, VSSQ)
Clock inputs (CLK, CLK#)
Command inputs (RAS#, CAS#, WE#, CS#)
Address inputs (A0-A11, BA0-BA1)
Data I/O (DQ0-DQ63)
ECC bits (DQ64-DQ71)
Data mask (DQM0-DQM8)
Presence Detect (SA0-SA2, SCL, SDA)

Ordering Information

Type No.	Frequency	CAS Latency	Package	Contact Pad
HB52R1289E22-A6B	100 MHz	3/4	168-pin dual lead out socket type	Gold
HB52R1289E22-B6B	100 MHz	4	168-pin dual lead out socket type	Gold

Functional Description

The HB52R1289E22 operates as a synchronous DRAM module with all signals referenced to the positive edge of the clock input. The module supports various operational modes including: