HB52R329E22 16M × 72 × 2-Bank Synchronous Dynamic RAM Module

Overview

The HB52R329E22 is a high-performance 8-byte DIMM (Dual In-line Memory Module) designed as an optimized main memory solution for 8-byte processor applications. This module integrates 36 pieces of 64-Mbit SDRAM (HM5264405FTB) in TCP packages, along with a PLL clock driver, register drivers, an inverter, and a serial EEPROM for Presence Detect (PD). The module is configured as a 16M × 72 × 2-bank Synchronous Dynamic RAM, making it suitable for high-density memory applications without requiring surface mount technology.

The HB52R329E22 features a 168-pin socket-type package with dual lead-out, ensuring compatibility with standard DIMM sockets. Decoupling capacitors are mounted adjacent to the TCP on the module board to enhance signal integrity and power stability.

Features

• Compatibility: Fully compliant with JEDEC standard outline registered 8-byte DIMM and Intel PCB Reference Design (Rev. 1.2).
• Package: 168-pin socket type (dual lead-out).
• Outline dimensions: 133.37 mm (length) × 38.10 mm (height) × 4.80 mm (thickness).
• Lead pitch: 1.27 mm.
• Power Supply: 3.3 V operation.
• Clock Frequency: Maximum of 100 MHz.
• Interface: LVTTL-compatible.
• Data Bus Width: ×72 ECC (Error Correction Code) support.
• Bank Operation: Four banks can operate simultaneously and independently.
• Burst Operations: Supports burst read/write and burst read/single write operations.
• Programmable Burst Length: Configurable as 1, 2, 4, 8, or full page.
• Burst Sequence: Supports sequential (BL = 1/2/4/8/full page) and interleave (BL = 1/2/4/8) modes.
• CAS Latency: Programmable to 3/4 (HB52R329E22-A6F) or fixed at 4 (HB52R329E22-B6F).
• Byte Control: Managed via DQMB signals.
• Refresh Cycles: 4096 refresh cycles per 64 ms.
• Refresh Modes: Auto-refresh and self-refresh supported.
• Full Page Burst: Capable of full-page burst operations with sequential burst and burst stop functionality.

Applications

The HB52R329E22 is designed for use in high-performance computing and memory-intensive applications, including:

• Server and workstation memory expansion.
• High-end computing systems requiring ECC support.
• Embedded systems with stringent memory reliability requirements.
• Data center and cloud computing infrastructure.
• Networking equipment requiring high-speed memory access.

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (V_DD): -0.5 V to +4.6 V.
• Input Voltage (V_IN): -0.5 V to V_DD + 0.5 V.
• Operating Temperature: 0°C to +70°C (commercial) or -40°C to +85°C (industrial).
• Storage Temperature: -55°C to +125°C.

Recommended Operating Conditions

• Supply Voltage (V_DD): 3.3 V ± 0.3 V.
• Clock Frequency: Up to 100 MHz.
• Input High Voltage (V_IH): 2.0 V min.
• Input Low Voltage (V_IL): 0.8 V max.

Timing Parameters

• CAS Latency: 3 or 4 clock cycles (programmable).
• RAS to CAS Delay (t_RCD): 20 ns (min).
• Row Precharge Time (t_RP): 20 ns (min).
• Active to Precharge Time (t_RAS): 50 ns (min).

Package Information

Mechanical Specifications

• Package Type: 168-pin socket type (dual lead-out).
• Dimensions: 133.37 mm (length) × 38.10 mm (height) × 4.80 mm (thickness).
• Lead Pitch: 1.27 mm.
• Contact Pad: Gold-plated for enhanced conductivity.

Pin Configuration

The HB52R329E22 follows a standard 168-pin DIMM pinout, with dual lead-out for improved signal integrity. Key pin groups include:

• Address Pins (A0-A11): Row and column address inputs.
• Data Pins (DQ0-DQ71): 72-bit data bus with ECC support.
• Control Pins (RAS, CAS, WE, CS): Memory operation control signals.
• Clock Pins (CLK, CLK): Differential clock inputs.

Ordering Information

The HB52R329E22 is available in two variants based on CAS latency:

• HB52R329E22-A6F: 100 MHz operation with programmable CAS latency of 3/4.
• HB52R329E22-B6F: 100 MHz operation with fixed CAS latency of 4.

Both variants are supplied in a 168-pin dual lead-out socket type package with gold contact pads.