HB52RF329E2

HB52RF329E2 16M × 72 × 2-Bank Synchronous Dynamic RAM Registered Module Technical Summary

Overview

The HB52RF329E2 is a high-performance 8-byte DIMM (Dual In-line Memory Module) designed as an optimized main memory solution for 8-byte processor applications. This module integrates 18 pieces of 64-Mbit SDRAM (HM5264405FTB) in TCP packaging, along with a PLL clock driver, register drivers, and a serial EEPROM for Presence Detect (PD). The module is built for high-density mounting without requiring surface-mount technology, making it ideal for space-constrained applications. With a 168-pin socket-type package, the HB52RF329E2 ensures reliable performance in demanding computing environments.

Features

• Compatibility: Fully compliant with JEDEC standard 8-byte DIMM specifications.
• Package: 168-pin socket type (dual lead-out) with dimensions: 133.37 mm (Length) × 38.1 mm (Height) × 4.00 mm (Thickness).
• Power Supply: 3.3V operation.
• Clock Frequency: Supports up to 133 MHz (maximum).
• Interface: LVTTL-compatible.
• Data Bus Width: ×72 ECC (Error-Correcting Code) for enhanced data integrity.
• Bank Operation: Four banks capable of simultaneous and independent operation.
• Burst Modes: Supports burst read/write and burst read/single write operations.
• Programmable Burst Length: Configurable as 1, 2, 4, 8, or full page.
• Burst Sequences: Supports sequential and interleave modes.
• CAS Latency: Programmable with 4 cycles at 133 MHz and 3 cycles at 100 MHz.
• Refresh Modes: Auto-refresh and self-refresh with 4096 refresh cycles every 64 ms.
• Full Page Burst: Capable of sequential burst and burst stop functionality.

Applications

The HB52RF329E2 is designed for high-performance computing and server applications where reliability and memory density are critical. Its primary use cases include:

• Enterprise Servers: Provides stable, high-bandwidth memory for data centers and cloud computing.
• Workstations: Enhances performance in engineering, scientific, and multimedia workstations.
• Networking Equipment: Suitable for routers, switches, and other high-speed communication devices.
• Embedded Systems: Ideal for industrial computing applications requiring robust memory solutions.

Electrical Characteristics

The HB52RF329E2 operates under the following electrical parameters:

• Supply Voltage (V_DD): 3.3V ± 0.3V.
• Operating Frequency: Up to 133 MHz (with CAS latency = 4) or 100 MHz (with CAS latency = 3).
• Input/Output Levels: LVTTL-compatible.
• Power Consumption: Optimized for low-power operation in high-performance environments.
• Refresh Requirements: 4096 refresh cycles every 64 ms to maintain data integrity.

Package Information

The HB52RF329E2 is housed in a 168-pin socket-type package with the following mechanical specifications:

• Dimensions: 133.37 mm (Length) × 38.1 mm (Height) × 4.00 mm (Thickness).
• Lead Pitch: 1.27 mm.
• Contact Pad: Gold-plated for enhanced conductivity and corrosion resistance.
• Mounting: Dual lead-out design for secure socket mounting.

Ordering Information

The following part number variants are available for the HB52RF329E2:

• HB52RF329E2-75F: Optimized for 133 MHz operation with CAS latency = 4. Also supports 100 MHz operation at CAS latency = 3.

Note: All variants feature a 168-pin dual lead-out socket type with gold contact pads.

Conclusion

The HB52RF329E2 is a high-performance, JEDEC-compliant DIMM module designed for demanding computing environments. With its 72-bit ECC data bus, programmable burst modes, and robust refresh mechanisms, it provides a reliable memory solution for servers, workstations, and embedded systems. The 168-pin socket-type package ensures easy integration, while the gold-plated contacts enhance long-term reliability. Whether used in enterprise data centers or industrial computing applications, the HB52RF329E2 delivers the speed, density, and stability required for modern processing needs.