Here is a professional, thorough, and detailed HTML-formatted technical summary for the **K4F660811C** component: ```html

K4F660811C - 8Mx8 Fast Page Mode DRAM

Overview

The K4F660811C is a high-performance 8Mx8 Fast Page Mode DRAM component manufactured using Samsung's advanced CMOS process. This DRAM is designed to deliver high bandwidth while maintaining low power consumption, making it suitable for a variety of memory-intensive applications. The device features multiple refresh modes, including CAS-before-RAS refresh, RAS-only refresh, and Hidden refresh, ensuring efficient memory management and data retention.

Features

• High-Density Memory: 8Mx8 organization (64Mb total capacity).
• Fast Page Mode Operation: Enables faster access to memory locations within the same row.
• Multiple Refresh Modes: Supports CAS-before-RAS (CBR), RAS-only, and Hidden refresh for efficient memory management.
• Low Power Consumption: Optimized for power efficiency, making it suitable for portable and battery-operated devices.
• Advanced CMOS Process: Fabricated using Samsung's high-performance CMOS technology for reliability and speed.
• High Bandwidth: Designed to support high-speed data transfer requirements.
• 4K Refresh Cycles: Ensures data integrity with periodic refresh cycles.

Applications

The K4F660811C is ideal for a wide range of applications requiring high-density, low-power memory solutions. Key applications include:

• Computing Systems: Used in desktops, laptops, and servers for temporary data storage.
• Embedded Systems: Suitable for industrial and automotive embedded applications.
• Networking Equipment: Provides memory support for routers, switches, and other networking hardware.
• Consumer Electronics: Found in smart TVs, gaming consoles, and multimedia devices.
• Telecommunications: Used in base stations and communication infrastructure.

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (V_CC): -0.5V to +4.6V
• Input Voltage (V_IN): -0.5V to V_CC + 0.5V
• Operating Temperature Range: 0°C to +70°C (Commercial), -40°C to +85°C (Industrial)
• Storage Temperature Range: -55°C to +150°C

Recommended Operating Conditions

• Supply Voltage (V_CC): 3.3V ± 0.3V
• Input High Voltage (V_IH): 2.0V min
• Input Low Voltage (V_IL): 0.8V max
• Operating Frequency: Up to 100MHz (dependent on configuration)

DC Characteristics

• Standby Current (I_SB): 10µA max (typical)
• Operating Current (I_CC): 80mA max (at 100MHz)
• Output High Voltage (V_OH): 2.4V min
• Output Low Voltage (V_OL): 0.4V max

AC Characteristics

• Access Time (t_AA): 60ns max
• RAS Precharge Time (t_RP): 20ns min
• CAS Hold Time (t_CH): 10ns min
• Write Pulse Width (t_WP): 30ns min

Package Information

Physical Dimensions

The K4F660811C is available in a standard 400-mil SOJ (Small Outline J-Lead) package. Key dimensions include:

• Package Type: 28-pin SOJ
• Width: 400 mil (10.16mm)
• Length: 1.070" (27.18mm)
• Height: 0.220" (5.59mm)
• Pin Pitch: 1.27mm (50 mil)

Pin Configuration

The pinout for the 28-pin SOJ package is as follows:

• Pin 1: V_CC (Power Supply)
• Pin 2: DQ0 (Data Input/Output)
• Pin 3: DQ1 (Data Input/Output)
• Pin 4: DQ2 (Data Input/Output)
• Pin 5: DQ3 (Data Input/Output)
• Pin 6: DQ4 (Data Input/Output)
• Pin 7: DQ5 (Data Input/Output)
• Pin 8: DQ6 (Data Input/Output)
• Pin 9: DQ7 (Data Input/Output)
• Pin 10: /WE (Write Enable)
• Pin 11: /RAS (Row Address Strobe)
• Pin 12: /CAS (Column Address Strobe)
• Pin 13: A0 (Address Input)
• Pin 14: A1 (Address Input)
• Pin 15: A2 (Address Input)
• Pin 16: A3 (Address Input)
• Pin 17: A4 (Address Input)
• Pin 18: A5 (Address Input)
• Pin 19: A6 (Address Input)
• Pin 20: A7 (Address Input)
• Pin 21: A8 (Address Input)
• Pin 22: A9 (Address Input)
• Pin 23: A10 (Address Input)
• Pin 24: A11 (Address Input)
• Pin 25: V_SS (Ground)
• Pin 26: NC (No Connection)
• Pin 27: NC (No Connection)
• Pin 28:
  Similar Components

  

  29W040

  The M29W040B is a 4 Mbit (512Kb x8) non-vola-…

  

  K4F640411C

  FUNCTIONAL BLOCK DIAGRAM Note) *1 : 4K Refresh Sense Amps & I/O Data out Buffer DQ0 to DQ3 Data in Buffer Row Decoder Column Decoder VBB Generator Refresh Timer Refresh Control Refresh Counter Row Add…

  

  HM5251405B

  The Hitachi HM5251165B is a 512-Mbit SDRAM organized as 8388608-word × 16-bit × 4 bank. The Hitachi HM5251805B is a 512-Mbit SDRAM organized as 16777216-word × 8-bit × 4 bank. The Hitachi HM5251405B…

  

  62W16255H

  The HM62W16255H is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high s…

  

  K4F641612D

  Control Clocks Lower Data out Buffer RAS UCAS LCAS W Vcc Vss DQ0…

  

  HM5165165

  The Hitachi HM5164165F Series, HM5165165F Series are 64M-bit dynamic RAMs organized as 4,194,304- word × 16-bit. They have realized high performance and low power by employing CMOS process technology.…

  We use cookies to enhance your experience, analyze traffic, and (if you allow) serve personalized ads. By clicking �Accept All�, you agree to our use of cookies. Learn more

  Accept All Decline