The Hitachi HM5112805F and HM5113805F are high-performance 128M-bit dynamic RAMs (DRAMs) organized as 16,777,216 words × 8 bits. These devices leverage advanced CMOS process technology to achieve low power consumption while maintaining high-speed operation. The HM5112805F and HM5113805F support Extended Data Out (EDO) Page Mode, enabling faster access times for improved system performance. These DRAMs are designed for applications requiring reliable, high-density memory with efficient power management.
The HM5112805F and HM5113805F are ideal for a wide range of applications requiring high-density, low-power memory solutions, including:
The following table summarizes the key electrical specifications of the HM5112805F and HM5113805F DRAMs:
The HM5112805F and HM5113805F support multiple refresh modes to accommodate different system requirements:
The HM5112805F and HM5113805F are available in industry-standard packages for easy integration into various systems. Key package details include:
The following part numbers are available for ordering:
The Hitachi HM5112805F and HM5113805F DRAMs provide a robust, high-performance memory solution for applications requiring 128M-bit density and low power consumption. With features like EDO Page Mode, multiple refresh options, and battery backup support, these devices are well-suited for a wide range of computing, networking, and consumer electronics applications. Their 3.3V operation and industry-standard packaging ensure seamless integration into modern system designs.