K4E640412C 16Mx4 EDO Mode DRAM Technical Summary

Overview

The K4E640412C is a high-performance 16Mx4 Extended Data Out (EDO) Mode DRAM component manufactured using Samsung's advanced CMOS process technology. This memory device offers 67,108,864 bits of storage organized as 16,777,216 words by 4 bits, delivering high bandwidth while maintaining low power consumption and high reliability. The component supports various refresh modes including CAS-before-RAS, RAS-only, Hidden refresh, and Self-refresh (L-version only), making it suitable for a wide range of applications requiring efficient memory management.

Designed with LVTTL-compatible inputs and outputs, the K4E640412C operates with a +3.3V ±0.3V power supply and is available in both Plastic SOJ and TSOP(II) package options. The device complies with JEDEC standard pinouts, ensuring compatibility with industry-standard designs.

Features

• Extended Data Out (EDO) Mode Operation: Enhances memory bandwidth by maintaining valid output data beyond the CAS signal transition
• Advanced Refresh Capabilities:
  • CAS-before-RAS refresh capability
  • RAS-only refresh capability
  • Hidden refresh capability
  • Self-refresh capability (L-version only)
• Fast Parallel Test Mode: Enables efficient production testing
• LVTTL Compatibility: 3.3V compatible inputs and outputs for modern low-voltage systems
• Flexible Write Options: Supports both Early Write and output enable controlled write modes
• Standard Compliance: JEDEC standard pinout for design compatibility
• Package Options: Available in Plastic SOJ and TSOP(II) packages
• Power Supply: Single +3.3V ±0.3V operation
• High Reliability: Manufactured using advanced CMOS process technology

Applications

The K4E640412C is designed for use in a variety of electronic systems requiring high-performance, low-power memory solutions:

• Computer Systems: Main memory for desktop and portable computers
• Networking Equipment: Buffers and cache memory in routers and switches
• Graphics Systems: Frame buffer memory for display controllers
• Embedded Systems: Memory for industrial control systems and automation equipment
• Telecommunications: Data buffers in communication infrastructure
• Consumer Electronics: High-performance memory for advanced TV systems and set-top boxes

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (Vcc): -0.5V to +4.6V
• Input Voltage (Vin): -0.5V to Vcc+0.5V
• Output Voltage (Vout): -0.5V to Vcc+0.5V
• Operating Temperature Range: 0°C to +70°C (Commercial)
• Storage Temperature Range: -55°C to +125°C

Recommended Operating Conditions

• Supply Voltage (Vcc): 3.3V ±0.3V
• Input High Voltage (VIH): 2.0V min (Vcc=3.0V)
• Input Low Voltage (VIL): 0.8V max (Vcc=3.0V)
• Operating Temperature: 0°C to +70°C

DC Characteristics

• Input Leakage Current (Ili): ±1μA max
• Output Leakage Current (Ilo): ±1μA max
• Operating Current (Icc1): 80mA max (Active, tRC=100ns)
• Standby Current (Icc2): 20mA max (CMOS level inputs)
• Self-Refresh Current (Icc3): 400μA max (L-version only)

AC Characteristics

• RAS Access Time (tRAC): 60ns max
• CAS Access Time (tCAC): 15ns max
• CAS Precharge Time (tCP): 15ns min
• RAS Precharge Time (tRP): 30ns min
• Write Pulse Width (tWP): 30ns min
• Refresh Period (tREF): 64ms (4K refresh cycles)

Package Information

Available Packages

• Plastic SOJ (Small Outline J-lead): 400mil body width, 42-pin configuration
• TSOP(II) (Thin Small Outline Package): 400mil body width, 42-pin configuration

Package Dimensions (Typical)

• SOJ Package:
  • Body Length: 20.95mm max
  • Body Width: 10.16mm max
  • Body Height: 2.41mm max
  • Lead Pitch: 1.27mm
• TSOP(II) Package:
  • Body Length: 18.41mm max
  • Body Width: 10.16mm max
  • Body Height: 1.20mm max
  • Lead Pitch: 0.80mm

Pin Configuration

The K4E640412C follows standard JEDEC pinout configuration with the following key signals:

• Address Inputs: A0-A12 (with A0-A11 used for 4K refresh)
• Control Signals: RAS, CAS, W (Write Enable)
• Data I/O: DQ0-DQ3 (4-bit data bus)
• Power: Vcc (+3.3V), Vss (Ground)

Functional Description

The K4E640412C operates as a standard EDO DRAM with enhanced data output characteristics. The device features a multiplexed address bus where row and column addresses are presented sequentially. The Extended Data Out functionality allows the output data to remain valid after the CAS signal transitions, enabling faster system cycle times compared to conventional DRAMs.

The memory array consists of 16,777,216 x 4 cells organized in a matrix structure. The device supports various refresh modes to maintain data integrity, including the standard CAS-before-RAS refresh, RAS-only refresh, and Hidden refresh. The L-version of the component additionally supports Self-refresh mode for low-power applications.

The write operation can be configured in either Early Write mode (where write commands are recognized at the leading edge of CAS) or output enable controlled write mode (where write commands are recognized while output is disabled). This flexibility allows the device to be used in various system architectures.

Ordering Information

The complete part number includes information about speed grade, package