The K4E640412D is a 16Mx4 Extended Data Out (EDO) Mode DRAM component manufactured using Samsung's advanced CMOS process technology. This high-performance memory device is designed to deliver high bandwidth, low power consumption, and reliable operation for various computing and embedded applications. The device supports multiple refresh modes, including CAS-before-RAS, RAS-only, Hidden refresh, and Self-refresh (L-version only), making it suitable for systems requiring efficient memory management.
The K4E640412D is designed for use in a variety of electronic systems requiring high-speed, low-power memory solutions. Typical applications include:
The K4E640412D features a memory array of 16,777,216 x 4 cells, organized for efficient data storage and retrieval. The control clocks (RAS, CAS, W) manage the timing of read and write operations, while the address inputs (A0~A12) select the memory locations. The device includes a 4K refresh cycle capability to maintain data integrity.
The K4E640412D 16Mx4 EDO Mode DRAM is a versatile and high-performance memory solution suitable for a wide range of applications. Its advanced features, including multiple refresh modes and LVTTL compatibility, make it an excellent choice for systems requiring reliable and efficient memory operation. With options for both SOJ and TSOP(II) packages, the K4E640412D offers flexibility in design and integration.