K4E660811C

Technical Summary: K4E660811C 8Mx8 EDO Mode DRAM

Overview

The K4E660811C is an 8Mx8 Extended Data Out (EDO) Mode Dynamic Random Access Memory (DRAM) component, fabricated using Samsung's advanced CMOS process technology. This device is designed to deliver high bandwidth and low power consumption, making it suitable for a wide range of computing and embedded applications. The K4E660811C supports multiple refresh modes, including CAS-before-RAS (CBR) refresh, RAS-only refresh, and Hidden refresh, ensuring efficient memory management and data retention.

With its 4K refresh cycles capability, this DRAM family is optimized for performance and reliability. The EDO mode enhances data transfer rates by allowing the data output to remain valid even after the column address strobe (CAS) signal is deactivated, thereby improving system throughput.

Features

• High-Density Memory: 8Mx8 organization (64Mb total capacity).
• EDO Mode Support: Enables faster data access by extending data output validity beyond CAS deactivation.
• Multiple Refresh Modes: Includes CAS-before-RAS (CBR) refresh, RAS-only refresh, and Hidden refresh for efficient memory management.
• 4K Refresh Cycles: Optimized refresh operation for improved performance and reliability.
• Low Power Consumption: Fabricated using advanced CMOS process technology to minimize power usage.
• High Bandwidth: Designed for applications requiring rapid data access and transfer.
• Wide Operating Voltage Range: Compatible with standard DRAM voltage levels.
• Industrial Temperature Range: Suitable for use in harsh environments.

Applications

The K4E660811C is versatile and can be deployed in various applications, including but not limited to:

• Desktop and Laptop Computers: Used as main memory or cache in personal computing systems.
• Embedded Systems: Ideal for industrial control systems, medical devices, and automotive electronics.
• Networking Equipment: Suitable for routers, switches, and other high-speed data communication devices.
• Consumer Electronics: Found in gaming consoles, set-top boxes, and multimedia devices.
• Telecommunications: Used in base stations and other telecom infrastructure requiring high-speed memory.

Electrical Characteristics

The K4E660811C operates under the following electrical conditions:

• Supply Voltage (Vcc): 3.3V ± 0.3V
• Operating Temperature Range: -40°C to +85°C (industrial grade)
• Refresh Time: 64ms (4K refresh cycles)
• Access Time: Varies by speed grade (e.g., 60ns, 70ns)
• Standby Current: Typically less than 10µA in power-down mode
• Active Current: Dependent on operating frequency and load conditions

Functional Description

The K4E660811C operates as a standard EDO DRAM with enhanced features for improved performance. The device is organized as 8,388,608 words of 8 bits each, accessed via a multiplexed address bus. The row and column addresses are latched using the RAS (Row Address Strobe) and CAS (Column Address Strobe) signals, respectively.

The EDO mode allows the data outputs to remain valid even after the CAS signal goes inactive, enabling the next column address to be accessed while the current data is still being read. This results in a higher effective bandwidth compared to conventional DRAMs.

The K4E660811C supports three refresh modes:

• CAS-before-RAS (CBR) Refresh: The CAS signal is activated before RAS to initiate a refresh cycle.
• RAS-only Refresh: Only the RAS signal is used to refresh an entire row.
• Hidden Refresh: Combines a read or write operation with a refresh cycle to minimize overhead.

Package Information

The K4E660811C is available in a standard 400-mil, 28-pin SOJ (Small Outline J-lead) package. The package dimensions and pin configuration are as follows:

• Package Type: 28-pin SOJ
• Package Dimensions: 400 mil width, 0.6mm lead pitch
• Pin Count: 28
• Pin Configuration: Includes address pins (A0-A11), data I/O pins (DQ0-DQ7), control pins (RAS, CAS, WE, OE), and power supply pins (Vcc, Vss).

Conclusion

The K4E660811C 8Mx8 EDO Mode DRAM is a high-performance memory solution designed for applications requiring high bandwidth, low power consumption, and reliable operation. With its support for multiple refresh modes and advanced CMOS process technology, this device is well-suited for a wide range of computing and embedded systems. The 28-pin SOJ package ensures compatibility with standard DRAM sockets, making it easy to integrate into existing designs.

For detailed specifications, timing diagrams, and application notes, refer to the official Samsung datasheet for the K4E660811C.