Here is a professional, thorough, and detailed HTML-formatted technical summary for the **K4F640811C** component: K4F640811C Technical Summary

K4F640811C - 8Mx8 Fast Page Mode DRAM

Overview

The K4F640811C is an 8Mx8 Fast Page Mode DRAM (Dynamic Random Access Memory) component fabricated using Samsung's advanced CMOS process technology. This high-performance memory device is designed to deliver high bandwidth while maintaining low power consumption, making it suitable for a wide range of computing and embedded applications.

With its 8-bit wide data bus and 8M word depth, the K4F640811C provides a total storage capacity of 64 megabits (8 megabytes). The device supports multiple refresh modes including CAS-before-RAS refresh, RAS-only refresh, and Hidden refresh, ensuring efficient memory management in various system configurations.

Key Features

High Density: 64Mb (8Mx8) organization
Fast Page Mode Operation: Enables faster access to data within the same row
Multiple Refresh Modes: Supports CAS-before-RAS (CBR), RAS-only, and Hidden refresh
Low Power Consumption: Optimized CMOS process for power efficiency
4K Refresh Cycles: Standard refresh requirement (4096 cycles every 64ms)
Wide Operating Voltage: Compatible with various system requirements
High Bandwidth: Designed for applications requiring fast data transfer
Industrial Temperature Range: Suitable for demanding environments

Applications

The K4F640811C is suitable for a variety of applications including:

Industrial control systems
Embedded computing platforms
Telecommunications equipment
Networking devices
Legacy computer systems
Medical equipment
Automotive electronics (non-safety critical)
Test and measurement instruments

Electrical Characteristics

Absolute Maximum Ratings

Supply Voltage (Vcc): -0.5V to +4.6V
Input Voltage (Vin): -0.5V to Vcc+0.5V
Operating Temperature: -40°C to +85°C
Storage Temperature: -55°C to +125°C
Power Dissipation: 1W (max)

Recommended Operating Conditions

Supply Voltage (Vcc): 3.3V ±0.3V
Input High Voltage (Vih): 2.0V min
Input Low Voltage (Vil): 0.8V max
Operating Temperature Range: 0°C to +70°C (Commercial) / -40°C to +85°C (Industrial)

DC Characteristics

Input Leakage Current (Ili): ±1μA max
Output Leakage Current (Ilo): ±1μA max
Operating Current (Icc1): 80mA max (active)
Standby Current (Icc2): 20mA max
Refresh Current (Icc3): 30mA max

AC Characteristics

RAS Precharge Time (tRP): 20ns min
CAS Precharge Time (tCP): 20ns min
RAS to CAS Delay (tRCD): 20ns min
CAS Pulse Width (tCAS): 20ns min
Access Time from CAS (tCAC): 15ns max
Access Time from RAS (tRAC): 60ns max
Page Mode Cycle Time (tPC): 35ns min

Functional Description

Memory Organization

The K4F640811C is organized as 8,388,608 words × 8 bits. The memory array is divided into four banks of 2,097,152 words each, with each bank containing 2,048 rows and 1,024 columns. This organization allows for efficient page mode operation and refresh management.

Refresh Modes

The device supports three refresh modes:

CAS-before-RAS Refresh (CBR): The most commonly used refresh method where CAS is asserted before RAS
RAS-only Refresh: Only RAS is cycled to refresh an entire row
Hidden Refresh: Refresh occurs during normal read or write operations without affecting system performance

Fast Page Mode Operation

In Fast Page Mode, multiple accesses to the same row can be performed by keeping RAS active while toggling CAS for each new column address. This significantly reduces access time for sequential memory locations within the same row.