03 50Y
#DMOS
#power switch
#vertical power
#temperature protection
#logic-compatible
#monolithic
#low on-state resistance
#power management
03 50Y - Vertical Power DMOS Switch
Overview
The 03 50Y is a high-performance vertical power DMOS switch designed for robust switching applications. This monolithic component integrates advanced temperature protection and logic-compatible control, making it suitable for demanding environments. With its low on-state resistance and built-in protection features, the 03 50Y offers reliable performance in power management circuits.
Features
- Vertical Power DMOS Architecture: Provides efficient power handling with minimal losses
- Low On-State Resistance: Reduces power dissipation and improves efficiency
- 5V Logic Compatible Input: Direct interface with microcontroller and digital logic circuits
- Overtemperature Protection: Self-resetting with hysteresis for reliable thermal management
- Overload Protection: Safeguards against excessive current conditions
- Monolithic Construction: Integrated design for improved reliability and space savings
- Fast Switching Characteristics: Enables high-frequency operation
Applications
The 03 50Y is suitable for a wide range of power switching applications including:
- DC motor control circuits
- Power supply switching
- Automotive electronic systems
- Industrial automation controls
- Battery management systems
- LED driver circuits
- Solid-state relay replacements
Electrical Characteristics
Absolute Maximum Ratings
- Drain-Source Voltage (VDS): 50V
- Gate-Source Voltage (VGS): ±20V
- Continuous Drain Current (ID): 3A
- Pulsed Drain Current (IDM): 10A
- Power Dissipation (PD): 2.5W @ 25°C
- Operating Junction Temperature Range: -55°C to +150°C
- Storage Temperature Range: -55°C to +175°C
Static Electrical Characteristics
- Drain-Source Breakdown Voltage (V(BR)DSS): 50V (min)
- Gate Threshold Voltage (VGS(th)): 1.0V to 2.5V
- On-State Resistance (RDS(on)): 0.05Ω (max) @ VGS = 5V, ID = 3A
- Zero Gate Voltage Drain Current (IDSS): 1μA (max) @ VDS = 50V
- Gate-Source Leakage Current (IGSS): ±100nA (max)
Dynamic Electrical Characteristics
- Input Capacitance (Ciss): 500pF (typ) @ VDS = 25V
- Output Capacitance (Coss): 200pF (typ) @ VDS = 25V
- Reverse Transfer Capacitance (Crss): 50pF (typ) @ VDS = 25V
- Turn-On Delay Time (td(on)): 10ns (typ)
- Turn-Off Delay Time (td(off)): 20ns (typ)
- Rise Time (tr): 15ns (typ)
- Fall Time (tf): 25ns (typ)
Package Information
TO-220AB Package
- Package Type: Through-hole, 3-pin TO-220AB
- Dimensions: 10.4mm x 4.6mm x 15.9mm (LxWxH)
- Lead Pitch: 2.54mm
- Mounting: Screw or clip mounting for heatsinking
- Terminal Material: Tin-plated copper
- Weight: 2.0g (approx.)
- Thermal Resistance (Junction-to-Case): 1.5°C/W
- Thermal Resistance (Junction-to-Ambient): 62°C/W (without heatsink)
Pin Configuration
- Pin 1 (Gate): Control input for switching operation
- Pin 2 (Drain): Power terminal connected to load
- Pin 3 (Source): Common return path and thermal pad
Thermal Characteristics
The 03 50Y features excellent thermal performance due to its vertical DMOS construction and TO-220 package design:
- Maximum junction temperature: 150°C
- Thermal shutdown threshold: 140°C (typ) with 15°C hysteresis
- Recommended operating temperature range: -40°C to +125°C
- Derating factor: 0.02W/°C above 25°C ambient temperature
Protection Features
Overtemperature Protection
The device incorporates a sophisticated thermal shutdown circuit that:
- Automatically disables the output when junction temperature exceeds threshold
- Implements hysteresis to prevent oscillation during thermal events
- Self-resets when temperature falls below recovery threshold
Overcurrent Protection
The 03 50Y includes built-in safeguards against excessive current conditions:
- Current limiting during overload conditions
- Short-circuit protection with timed shutdown
- Automatic recovery after fault condition removal
Design Considerations
Gate Drive Requirements
For optimal performance:
- Use 5V gate drive voltage for full enhancement
- Include 10Ω series gate resistor to control switching speed
- Ensure low-impedance gate drive circuit for fast switching
Layout Recommendations
- Minimize loop area in high-current paths
- Use thick copper traces for drain and source connections
- Place bypass capacitor close to device terminals
- Provide adequate heatsinking for high-power applications
Reliability Data
- MTBF (Mean Time Between Failures): >1,000,000 hours
- ESD Protection: Human Body Model > 2000V
- Moisture Sensitivity Level (MSL): MSL 1 (unlimited floor life)
- Flammability Rating: UL 94V-0
