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508 55

#N-Channel MOSFET #low on-state resistance #ESD protection #power efficiency #thermal performance #high power dissipation #wide operating temperature #integral zener diode #2kV ESD protection #electronic design
Technical Summary for 508 55 N-Channel MOSFET

Technical Summary: 508 55 N-Channel MOSFET

Overview

The 508 55 is a high-performance N-channel MOSFET designed for applications requiring very low on-state resistance and robust ESD protection. This component is optimized for power efficiency and thermal performance, making it suitable for demanding environments. With an integral zener diode for enhanced ESD protection, the 508 55 ensures reliability in circuits exposed to electrostatic discharge events up to 2kV. Its high power dissipation capability and wide operating temperature range further enhance its versatility in various electronic designs.

Features

Applications

The 508 55 N-channel MOSFET is well-suited for a variety of applications, including but not limited to:

Electrical Characteristics

The following table summarizes the key electrical specifications of the 508 55 N-channel MOSFET:

Absolute Maximum Ratings

Static Electrical Characteristics

Dynamic Electrical Characteristics

Package Information

The 508 55 N-channel MOSFET is available in a robust package designed for optimal thermal and electrical performance. Below are the key package details:

Package Type

Package Dimensions

Thermal Characteristics

Conclusion

The 508 55 N-channel MOSFET is a high-efficiency, robust component designed for demanding power applications. Its very low on-state resistance, high power dissipation capability, and integrated ESD protection make it an excellent choice for power supplies, motor control, and other high-current switching applications. Available in industry-standard packages like TO-220 and TO-263, it offers flexibility for both through-hole and surface-mount designs. Engineers can rely on the 508 55 for reliable performance in a wide range of operating conditions.

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