55 200 N-Channel Enhancement Mode MOSFET

Overview

The 55 200 is a high-performance N-channel enhancement mode MOSFET designed for efficient power management and switching applications. This component offers low on-state resistance, high-speed switching capabilities, and robust thermal performance, making it suitable for a wide range of industrial and consumer electronics applications. The 55 200 is engineered to deliver reliable operation under demanding conditions while maintaining optimal power efficiency.

Features

• N-Channel Enhancement Mode: Provides efficient switching with low gate drive power requirements.
• Low On-State Resistance (R_DS(on)): Minimizes conduction losses, improving overall efficiency.
• High-Speed Switching: Enables fast switching transitions, reducing power dissipation in high-frequency applications.
• High Voltage Tolerance: Supports operation in high-voltage circuits without compromising performance.
• Robust Thermal Performance: Designed to dissipate heat effectively, ensuring reliability under high-load conditions.
• ESD Protection: Built-in electrostatic discharge protection enhances durability during handling and operation.

Applications

The 55 200 MOSFET is versatile and can be used in a variety of applications, including but not limited to:

• Power Supplies: Used in DC-DC converters, voltage regulators, and switch-mode power supplies (SMPS).
• Motor Control: Ideal for driving motors in industrial automation, robotics, and automotive systems.
• LED Lighting: Efficiently controls current in LED drivers for high-brightness applications.
• Battery Management: Protects and manages power flow in rechargeable battery systems.
• Audio Amplifiers: Enhances performance in Class-D audio amplifiers.
• Consumer Electronics: Found in devices such as laptops, smartphones, and power adapters.

Electrical Characteristics

The following table outlines the key electrical specifications of the 55 200 MOSFET under standard operating conditions (unless otherwise noted):

Absolute Maximum Ratings

• Drain-Source Voltage (V_DSS): 200V
• Gate-Source Voltage (V_GS): ±20V
• Continuous Drain Current (I_D): 55A
• Pulsed Drain Current (I_DM): 110A
• Power Dissipation (P_D): 150W
• Operating Junction Temperature (T_J): -55°C to +175°C

Static Electrical Characteristics

• Threshold Voltage (V_GS(th)): 2V to 4V
• On-State Resistance (R_DS(on)): 0.025Ω (max) at V_GS = 10V, I_D = 55A
• Gate Charge (Q_g): 60nC (typical)
• Input Capacitance (C_iss): 2000pF (typical)
• Output Capacitance (C_oss): 500pF (typical)

Dynamic Electrical Characteristics

• Turn-On Delay Time (t_d(on)): 15ns (typical)
• Turn-Off Delay Time (t_d(off)): 30ns (typical)
• Rise Time (t_r): 20ns (typical)
• Fall Time (t_f): 25ns (typical)

Package Information

The 55 200 MOSFET is available in a TO-220 package, which provides excellent thermal and electrical performance. The package dimensions and pin configuration are as follows:

TO-220 Package Dimensions

• Length: 10.4mm (max)
• Width: 4.6mm (max)
• Height: 15.9mm (max)
• Lead Pitch: 2.54mm

Pin Configuration

• Pin 1 (Gate): Controls the MOSFET's switching operation.
• Pin 2 (Drain): Connects to the high-side load or power supply.
• Pin 3 (Source): Connects to ground or the low-side return path.

Thermal Characteristics

• Thermal Resistance (Junction-to-Case, R_θJC): 1.5°C/W
• Thermal Resistance (Junction-to-Ambient, R_θJA): 62°C/W

Conclusion

The 55 200 N-channel enhancement mode MOSFET is a high-efficiency, robust component suitable for a broad spectrum of power management and switching applications. Its combination of low on-state resistance, high-speed switching, and excellent thermal performance makes it an ideal choice for engineers designing power electronics systems. Whether used in industrial motor control, consumer electronics, or energy-efficient lighting, the 55 200 delivers reliable and efficient operation under demanding conditions.