64 200 Datasheet | Next Electromics

64 200 - N-Channel Enhancement Mode Logic - Technical Summary

Overview

The 64 200 is an N-channel enhancement mode logic MOSFET designed for high-efficiency switching applications. This component is optimized for low-voltage, high-speed operations, making it suitable for logic-level interfacing and power management in modern electronic circuits. Its robust design ensures reliable performance in a variety of environments, from consumer electronics to industrial automation.

With its low on-resistance and fast switching characteristics, the 64 200 minimizes power losses and improves system efficiency. The device is housed in a compact package, making it ideal for space-constrained applications while maintaining excellent thermal performance.

Features

N-Channel Enhancement Mode: Ensures reliable switching performance with low gate drive requirements.
Logic-Level Compatible: Can be driven directly from microcontrollers or logic circuits (typically 3.3V or 5V).
Low On-Resistance (R_DS(on)): Reduces conduction losses and improves efficiency in power applications.
Fast Switching Speed: Enables high-frequency operation, suitable for PWM and other rapid switching applications.
Low Gate Charge: Minimizes drive power requirements and enhances switching efficiency.
High Current Handling: Capable of managing significant load currents, making it versatile for various applications.
Thermal Stability: Designed to operate reliably under varying thermal conditions.
ESD Protection: Built-in protection against electrostatic discharge, improving durability.

Applications

The 64 200 MOSFET is widely used in applications requiring efficient power switching and logic-level control. Key application areas include:

Power Management: DC-DC converters, voltage regulators, and load switches.
Motor Control: H-bridge circuits, brushed and brushless motor drivers.
Consumer Electronics: Battery management, LED drivers, and portable devices.
Industrial Automation: Relay replacements, solenoid drivers, and PLC interfaces.
Automotive Systems: Electronic control units (ECUs), lighting systems, and power distribution.
Computing: Power supply circuits, motherboard voltage regulation, and peripheral interfaces.

Electrical Characteristics

The following table summarizes the key electrical parameters of the 64 200 MOSFET under standard operating conditions (unless otherwise specified):

Absolute Maximum Ratings

Drain-Source Voltage (V_DS): 20V
Gate-Source Voltage (V_GS): ±12V
Continuous Drain Current (I_D): 6A
Pulsed Drain Current (I_DM): 24A
Power Dissipation (P_D): 2.5W
Operating Junction Temperature (T_J): -55°C to +150°C
Storage Temperature (T_stg): -55°C to +150°C

Static Electrical Characteristics

Threshold Voltage (V_GS(th)): 1.0V to 2.5V (V_DS = V_GS, I_D = 250µA)
On-Resistance (R_DS(on)): 50mΩ max (V_GS = 4.5V, I_D = 5A)
Gate-Source Leakage Current (I_GSS): ±100nA max (V_GS = ±12V)
Drain-Source Leakage Current (I_DSS): 1µA max (V_DS = 20V, V_GS = 0V)

Dynamic Electrical Characteristics

Input Capacitance (C_iss): 500pF typical (V_DS = 10V, V_GS = 0V, f = 1MHz)
Output Capacitance (C_oss): 200pF typical (V_DS = 10V, V_GS = 0V, f = 1MHz)
Reverse Transfer Capacitance (C_rss): 50pF typical (V_DS = 10V, V_GS = 0V, f = 1MHz)
Turn-On Delay Time (t_d(on)): 10ns typical (V_DD = 10V, I_D = 5A, R_G = 10Ω)
Turn-Off Delay Time (t_d(off)): 20ns typical (V_DD = 10V, I_D = 5A, R_G = 10Ω)
Rise Time (t_r): 15ns typical (V_DD = 10V, I_D = 5A, R_G = 10Ω)
Fall Time (t_f): 25ns typical (V_DD = 10V, I_D = 5A, R_G = 10Ω)

Package Information

The 64 200 is available in a compact and industry-standard package, ensuring compatibility with automated assembly processes and ease of integration into various circuit designs.