Technical Summary: 75 100 N-Channel MOSFET

Overview

The 75 100 is a high-performance N-channel MOSFET designed for applications requiring efficient power switching and low on-state resistance. This component is optimized for use in power management circuits, motor control, and other high-current applications. With its robust construction and advanced semiconductor technology, the 75 100 offers reliable performance in demanding environments.

This MOSFET is characterized by its fast switching speeds, low gate charge, and high current-handling capability, making it suitable for both industrial and consumer electronics. The device is available in a variety of packages to accommodate different design requirements.

Features

• Low On-State Resistance (R_DS(on)): Minimizes conduction losses and improves efficiency.
• High Current Handling: Capable of handling continuous drain currents up to 75A, with peak currents up to 100A.
• Fast Switching Speeds: Optimized for high-frequency applications.
• Low Gate Charge: Reduces drive requirements and improves switching efficiency.
• Avalanche Energy Rated: Ensures robustness in inductive load applications.
• Thermal Stability: Designed to operate reliably over a wide temperature range.
• RoHS Compliant: Meets environmental and safety standards.

Applications

The 75 100 N-channel MOSFET is versatile and can be used in a wide range of applications, including but not limited to:

• Power Supplies: Switching regulators, DC-DC converters, and voltage regulators.
• Motor Control: H-bridge circuits, brushed and brushless motor drivers.
• Automotive Systems: Electronic control units (ECUs), LED drivers, and battery management systems.
• Industrial Equipment: Inverters, solenoids, and relay replacements.
• Consumer Electronics: Power management in laptops, gaming consoles, and home appliances.

Electrical Characteristics

The following table summarizes the key electrical characteristics of the 75 100 N-channel MOSFET under typical operating conditions (T_j = 25°C unless otherwise specified):

Absolute Maximum Ratings

• Drain-Source Voltage (V_DSS): 100V
• Gate-Source Voltage (V_GS): ±20V
• Continuous Drain Current (I_D): 75A
• Pulsed Drain Current (I_DM): 100A
• Power Dissipation (P_D): 200W
• Operating Junction Temperature Range (T_j): -55°C to +175°C

Static Electrical Characteristics

• Drain-Source On-State Resistance (R_DS(on)): 10mΩ (max) at V_GS = 10V, I_D = 50A
• Gate Threshold Voltage (V_GS(th)): 2V to 4V
• Zero Gate Voltage Drain Current (I_DSS): 1µA (max) at V_DS = 100V
• Gate-Source Leakage Current (I_GSS): ±100nA (max) at V_GS = ±20V

Dynamic Electrical Characteristics

• Input Capacitance (C_iss): 3000pF (typ) at V_DS = 25V, V_GS = 0V
• Output Capacitance (C_oss): 1500pF (typ) at V_DS = 25V, V_GS = 0V
• Reverse Transfer Capacitance (C_rss): 200pF (typ) at V_DS = 25V, V_GS = 0V
• Turn-On Delay Time (t_d(on)): 20ns (typ) at V_DD = 50V, I_D = 50A, R_G = 10Ω
• Turn-Off Delay Time (t_d(off)): 50ns (typ) at V_DD = 50V, I_D = 50A, R_G = 10Ω

Package Information

The 75 100 N-channel MOSFET is available in multiple package options to suit various design and thermal management requirements. Below are the details of the most common package:

TO-247 Package

• Package Type: TO-247 (Through-Hole)
• Dimensions: 15.7mm x 20.8mm x 5.1mm (L x W x H)
• Pin Configuration:
  • Pin 1: Gate (G)
  • Pin 2: Drain (D)
  • Pin 3: Source (S)
• Thermal Resistance (R_θJC): 0.5°C/W (junction-to-case)
• Mounting Torque: 0.5 N·m to 0.6 N·m recommended for heatsink attachment

Surface-Mount Options

For space-constrained applications, the 75 100 is also available in surface-mount packages such as D²PAK (TO-263). Key specifications include:

• Package Type: D²PAK
• Dimensions: 10.3mm x 9.4mm x 4.8mm (L x W x H)
• Thermal Resistance (R_θJA): 40°C/W (junction-to-ambient, no heatsink)

Conclusion

The 75 100 N-channel MOSFET is a high-performance component designed for demanding power-switching applications. Its combination of low on-state resistance, high current capability, and fast switching speeds makes it an excellent choice for power supplies, motor control, and automotive systems. With multiple package options and robust thermal performance, this MOSFET provides designers with flexibility and reliability in their applications.