Technical Summary: 82 100 - N-Channel Enhancement Mode MOSFET

Overview

The 82 100 is an N-channel enhancement mode MOSFET designed for high-efficiency switching and amplification applications. This component is optimized for low on-state resistance (R_DS(on)) and fast switching speeds, making it suitable for power management, motor control, and other high-performance electronic circuits. Its robust construction ensures reliability under demanding conditions, while its compact package allows for easy integration into various designs.

Features

• N-Channel Enhancement Mode: Provides efficient switching with positive gate voltage.
• Low On-State Resistance (R_DS(on)): Minimizes power loss and improves efficiency.
• Fast Switching Speed: Enables high-frequency operation for applications like PWM control.
• High Voltage Tolerance: Supports operation in circuits with moderate to high voltage requirements.
• Low Gate Drive Requirements: Reduces the complexity of driver circuitry.
• Thermal Stability: Designed to operate reliably across a wide temperature range.
• Compact Package: Available in industry-standard packages for easy PCB integration.

Applications

The 82 100 MOSFET is versatile and can be used in a variety of applications, including but not limited to:

• Power Supplies: Switching regulators, DC-DC converters, and voltage regulators.
• Motor Control: H-bridge circuits, brushed and brushless motor drivers.
• Automotive Electronics: Engine control units (ECUs), LED lighting drivers, and battery management systems.
• Consumer Electronics: Power management in laptops, smartphones, and other portable devices.
• Industrial Equipment: Relay replacements, solenoid drivers, and industrial automation systems.
• Renewable Energy: Solar inverters and charge controllers.

Electrical Characteristics

The following table summarizes the key electrical parameters of the 82 100 MOSFET under standard test conditions (unless otherwise specified):

Absolute Maximum Ratings

• Drain-Source Voltage (V_DS): 100V
• Gate-Source Voltage (V_GS): ±20V
• Continuous Drain Current (I_D): 8.2A
• Pulsed Drain Current (I_DM): 32A
• Power Dissipation (P_D): 50W
• Operating Junction Temperature (T_J): -55°C to +175°C
• Storage Temperature (T_stg): -55°C to +175°C

Static Electrical Characteristics

• Threshold Voltage (V_GS(th)): 2.0V to 4.0V (V_DS = V_GS, I_D = 250µA)
• On-State Resistance (R_DS(on)): 0.082Ω max (V_GS = 10V, I_D = 4.1A)
• Gate-Source Leakage Current (I_GSS): ±100nA max (V_GS = ±20V)
• Drain-Source Leakage Current (I_DSS): 10µA max (V_DS = 100V, V_GS = 0V)

Dynamic Electrical Characteristics

• Input Capacitance (C_iss): 500pF typical (V_DS = 25V, V_GS = 0V, f = 1MHz)
• Output Capacitance (C_oss): 150pF typical (V_DS = 25V, V_GS = 0V, f = 1MHz)
• Reverse Transfer Capacitance (C_rss): 50pF typical (V_DS = 25V, V_GS = 0V, f = 1MHz)
• Turn-On Delay Time (t_d(on)): 10ns typical (V_DD = 50V, I_D = 4.1A, R_G = 10Ω)
• Turn-Off Delay Time (t_d(off)): 25ns typical (V_DD = 50V, I_D = 4.1A, R_G = 10Ω)
• Rise Time (t_r): 15ns typical (V_DD = 50V, I_D = 4.1A, R_G = 10Ω)
• Fall Time (t_f): 20ns typical (V_DD = 50V, I_D = 4.1A, R_G = 10Ω)

Package Information

The 82 100 MOSFET is available in a TO-220AB package, which is widely used for power applications due to its excellent thermal performance and ease of mounting. Below are the key package details:

TO-220AB Package Dimensions

• Total Height: 16.0mm max
• Lead Length: 10.0mm min
• Lead Pitch: 2.54mm (0.1 inches)
• Mounting Hole Diameter: 3.5mm recommended
• Thermal Resistance (Junction-to-Case, R_θJC): 1.5°C/W
• Thermal Resistance (Junction-to-Ambient, R_θJA): 62°C/W (without heatsink)

Package Marking

The device is marked with the following information on the package body:

• Part Number: "82 100"
• Date Code: Manufacturing date in YYWW format (e.g., 2345 for the 45th week of 2023).
• Lot Code: Traceability information for quality control.

Recommended PCB Layout

For optimal