628511H

HM628511H Series 4-Mbit High-Speed Static RAM Technical Summary

Overview

The HM628511H Series is a high-performance 4-Mbit static RAM (SRAM) organized as 512k words × 8 bits. Designed using advanced CMOS process technology (4-transistor + 2-poly resistor memory cell) and high-speed circuit design techniques, this SRAM delivers exceptional access times, making it ideal for applications requiring high-speed, high-density memory with wide bit-width configurations. Typical use cases include cache and buffer memory in computing systems, telecommunications, and embedded applications.

Key Features

• Single 5.0V Power Supply: Operates at 5.0V ± 10% for broad compatibility.
• High-Speed Access Times: Available in 10 ns, 12 ns, and 15 ns maximum access time variants.
• Completely Static Operation: No clock or timing strobe required, simplifying system design.
• Equal Access and Cycle Times: Ensures consistent performance for read/write operations.
• TTL Compatibility: All inputs and outputs are directly TTL-compatible.
• Low Power Consumption:
  • Operating current: 180 mA (max) for 10 ns, 160 mA (max) for 12 ns, 140 mA (max) for 15 ns.
  • TTL standby current: 70 mA (max) for 10 ns, 60 mA (max) for 12 ns, 50 mA (max) for 15 ns.
  • CMOS standby current: 5 mA (max) (standard), 1.2 mA (max) (L-version).
• Data Retention:
  • Data retention current: 0.8 mA (max) (L-version).
  • Data retention voltage: 2V (min) (L-version).
• Center V_CC and V_SS Pinout: Optimized for reduced noise and improved signal integrity.

Applications

The HM628511H Series is designed for high-performance applications requiring fast, reliable, and dense memory solutions. Key application areas include:

• Cache Memory: High-speed access makes it ideal for CPU and GPU cache applications.
• Buffer Memory: Used in networking equipment, storage systems, and data acquisition systems.
• Embedded Systems: Suitable for industrial control, automotive, and aerospace applications.
• Telecommunications: Supports high-speed data processing in routers, switches, and base stations.
• Consumer Electronics: Used in gaming consoles, high-end printers, and multimedia devices.

Electrical Characteristics

The following table summarizes the key electrical specifications for the HM628511H Series:

• Supply Voltage (V_CC): 5.0V ± 10%
• Operating Temperature Range: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C), depending on variant.
• Input/Output Levels: TTL-compatible (V_IH = 2.2V min, V_IL = 0.8V max).
• Standby Current (TTL): 70 mA (max) for 10 ns, 60 mA (max) for 12 ns, 50 mA (max) for 15 ns.
• Standby Current (CMOS): 5 mA (max) (standard), 1.2 mA (max) (L-version).
• Data Retention Current (L-version): 0.8 mA (max) at 2V (min).

Package Information

The HM628511H Series is available in a 400-mil, 36-pin plastic Small Outline J-lead (SOJ) package (CP-36D). The pin arrangement is optimized for ease of PCB layout and signal integrity.

Ordering Information

• HM628511HJP-10: 10 ns access time, standard version.
• HM628511HJP-12: 12 ns access time, standard version.
• HM628511HJP-15: 15 ns access time, standard version.
• HM628511HLJP-10: 10 ns access time, low-power (L-version).
• HM628511HLJP-12: 12 ns access time, low-power (L-version).
• HM628511HLJP-15: 15 ns access time, low-power (L-version).

Pin Configuration (Top View)

• Pins 1-9, 17-18: Address inputs (A0-A18).
• Pins 10-11, 27-28: Power supply (V_CC) and ground (V_SS).
• Pins 7-8, 12-13, 25-26, 30-31: Data input/output (I/O1-I/O8).
• Pin 6: Chip select (CS).
• Pin 24: Output enable (OE).
• Pin 14: Write enable (WE).
• Pins 19, 36: No connection (NC).

Block Diagram

The HM628511H features a streamlined internal architecture with a memory array divided into 512k words × 8 bits. The block diagram includes:

• Address Decoder: Selects the appropriate memory cell based on input address lines (A0-A18).
• Data I/O Buffers: Manage bidirectional data flow (I/O1-I/O8).
• Control Logic: Handles chip select (CS), output enable (OE), and write enable (WE) signals.

Conclusion

The HM628511H Series is a high-performance, high-density SRAM solution designed for demanding applications requiring fast access times and low power consumption. Its robust design, TTL compatibility, and flexible packaging make it a versatile choice for engineers developing advanced computing, networking, and embedded systems.