HB52RF1289

HB52RF1289E2 64M × 72 × 2-Bank Synchronous Dynamic RAM Module Technical Summary

Overview

The HB52RF1289E2 is a high-performance 8-byte DIMM (Dual In-line Memory Module) designed as an optimized main memory solution for 8-byte processor applications. This module integrates 36 pieces of 256-Mbit SDRAM (HM5225405BTB) in TCP packaging, along with a PLL clock driver, register drivers, and a serial EEPROM for Presence Detect (PD). The module is built for high-density mounting without requiring surface mount technology, making it ideal for space-constrained applications. The HB52RF1289E2 features a 168-pin socket-type package with dual lead-out configuration, ensuring robust mechanical and electrical performance.

Key Features

• Compatibility: Fully compliant with JEDEC standard outline for 8-byte DIMM modules.
• Package: 168-pin socket type (dual lead-out) with dimensions 133.37 mm (L) × 38.10 mm (H) × 4.80 mm (T).
• Power Supply: 3.3V operation.
• Clock Frequency: Supports up to 133 MHz.
• Interface: LVTTL-compatible.
• Data Bus Width: ×72 ECC for error correction.
• Bank Operation: Four banks can operate simultaneously and independently.
• Burst Modes: Supports burst read/write and burst read/single write operations.
• Programmable Burst Length: Configurable as 1, 2, 4, or 8.
• Burst Sequence: Supports sequential and interleave modes.
• CAS Latency: Programmable to 4 cycles.
• Refresh Cycles: 8192 refresh cycles every 64 ms with auto-refresh and self-refresh options.

Applications

The HB52RF1289E2 is designed for high-performance computing and memory-intensive applications, including:

• Enterprise servers and data centers requiring high-density memory solutions.
• Workstations and high-end computing systems.
• Networking equipment such as routers and switches.
• Embedded systems with stringent memory performance requirements.
• Industrial computing applications where reliability and density are critical.

Electrical Characteristics

The module operates under the following electrical conditions:

• Supply Voltage (V_DD): 3.3V ±5%.
• Operating Temperature Range: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C).
• Clock Frequency: Maximum 133 MHz.
• Input/Output Levels: LVTTL-compatible.
• Power Consumption: Active mode current varies based on operational frequency and load conditions.
• Refresh Current: Specified for both auto-refresh and self-refresh modes.

Package Information

The HB52RF1289E2 is housed in a 168-pin socket-type package with the following mechanical specifications:

• Dimensions: 133.37 mm (length) × 38.10 mm (height) × 4.80 mm (thickness).
• Lead Pitch: 1.27 mm.
• Contact Pad: Gold-plated for enhanced conductivity and corrosion resistance.
• Mounting: Designed for socket mounting without requiring surface-mount soldering.

Ordering Information

The module is available in the following configuration:

• Model Number: HB52RF1289E2-75B
• Frequency: 133 MHz
• CAS Latency: 4 cycles
• Package: 168-pin dual lead-out socket type
• Contact Pad: Gold-plated

Pin Arrangement

The pin configuration for the HB52RF1289E2 includes key pins for power, ground, data, and control signals. Notable pins include:

• Pin 1: VDD (Power Supply)
• Pin 10, 11: Data I/O (DQ0, DQ1)
• Pin 40, 41: Address Inputs (A0, A1)
• Pin 84, 85: Bank Select (BA0, BA1)
• Pin 94, 95: Clock Enable (CKE0, CKE1)
• Pin 124, 125: Data Mask (DQM0, DQM1)
• Pin 168: Ground (VSS)

Mechanical Handling Notes

To prevent mechanical damage, avoid pushing the cover or dropping the module. Proper handling ensures longevity and reliability in operation.

Conclusion

The HB52RF1289E2 is a robust, high-density memory solution tailored for demanding computing environments. With its JEDEC-compliant design, advanced features like ECC support, and flexible burst modes, it is well-suited for applications requiring high-speed, reliable memory performance. The 168-pin socket-type package simplifies installation while maintaining high mechanical integrity.