Technical Summary: K4E640811C 8Mx8 EDO Mode DRAM

K4E640811C 8Mx8 EDO Mode DRAM

Overview

The K4E640811C is an 8Mx8 Extended Data Out (EDO) Mode Dynamic Random-Access Memory (DRAM) component fabricated using Samsung's advanced CMOS process. This device is designed to deliver high bandwidth and low power consumption, making it suitable for a variety of computing and embedded applications. The DRAM features multiple refresh modes, including CAS-before-RAS (CBR) refresh, RAS-only refresh, and Hidden refresh, ensuring efficient memory management and data retention.

Features

High Bandwidth: Optimized for high-speed data access with EDO mode support.
Low Power Consumption: Fabricated using advanced CMOS technology to minimize power usage.
Multiple Refresh Modes: Supports CAS-before-RAS (CBR) refresh, RAS-only refresh, and Hidden refresh for flexible memory management.
4K Refresh Cycles: Ensures reliable data retention with efficient refresh cycles.
8Mx8 Organization: Provides 8 Megabits of memory organized as 8 million words of 8 bits each.
EDO Mode: Enhances performance by allowing data to be accessed more quickly than standard DRAM.

Applications

The K4E640811C is suitable for a wide range of applications, including but not limited to:

Computing Systems: Used in personal computers, workstations, and servers for main memory or cache applications.
Embedded Systems: Ideal for industrial control systems, networking equipment, and telecommunications devices.
Consumer Electronics: Found in gaming consoles, set-top boxes, and multimedia devices requiring efficient memory solutions.
Automotive Systems: Utilized in infotainment and navigation systems where reliable memory performance is critical.

Electrical Characteristics

Absolute Maximum Ratings

Supply Voltage (Vcc): -0.5V to +4.6V
Input Voltage (Vin): -0.5V to Vcc + 0.5V
Operating Temperature Range: 0°C to +70°C
Storage Temperature Range: -55°C to +125°C

Recommended Operating Conditions

Supply Voltage (Vcc): 3.3V ± 0.3V
Input High Voltage (Vih): 2.0V min
Input Low Voltage (Vil): 0.8V max
Operating Frequency: Up to 66MHz (dependent on system configuration)

DC Characteristics

Standby Current (Isb): 10µA max (at 3.3V, 25°C)
Operating Current (Icc): 80mA max (at 3.3V, 25°C)
Output High Voltage (Voh): 2.4V min (at Ioh = -4.0mA)
Output Low Voltage (Vol): 0.4V max (at Iol = 8.0mA)

AC Characteristics

RAS Access Time (tRAC): 60ns max
CAS Access Time (tCAC): 15ns max
RAS Precharge Time (tRP): 20ns min
CAS Precharge Time (tCP): 15ns min
Write Pulse Width (tWP): 25ns min
Refresh Cycle Time (tRC): 64ms max

Package Information

Physical Dimensions

The K4E640811C is available in a standard 400-mil 28-pin Plastic Dual In-line Package (PDIP) and a 300-mil 28-pin Small Outline Integrated Circuit (SOIC) package. Below are the detailed dimensions for each package type: