HB52E649E12

Overview

The HB52E649E12 is a high-performance 8-byte DIMM (Dual In-line Memory Module) designed as an optimized main memory solution for 8-byte processor applications. This module is a 64M × 72 × 1-bank Synchronous Dynamic RAM (SDRAM) Registered Module, integrating 18 pieces of 256-Mbit SDRAM (HM5225405BTT) in TSOP packages. Additionally, it includes a PLL clock driver, two register drivers, and a 2-kbit serial EEPROM for Presence Detect (PD). The module features a 168-pin socket-type package with dual lead-out, enabling high-density mounting without requiring surface-mount technology. Decoupling capacitors are strategically placed beside each TSOP on the module board to enhance signal integrity.

Features

• Compatibility: Fully compliant with JEDEC standard outline for 8-byte DIMM and Intel PCB Reference design (Rev.1.2).
• Package: 168-pin socket type (dual lead-out) with dimensions: 133.37 mm (Length) × 43.18 mm (Height) × 4.00 mm (Thickness). Lead pitch: 1.27 mm.
• Power Supply: 3.3 V operation.
• Clock Frequency: Maximum of 100 MHz.
• Interface: LVTTL.
• Data Bus Width: ×72 ECC (Error-Correcting Code) for enhanced reliability.
• Memory Architecture: Single pulsed RAS (Row Address Strobe).
• Bank Operation: Four banks capable of simultaneous and independent operation.
• Burst Operations: Supports burst read/write and burst read/single write operations.
• Programmable Burst Length: Configurable as 1, 2, 4, or 8.
• Burst Sequence: Supports sequential and interleave modes.
• Programmable CAS Latency:
  • 3 or 4 (for HB52E649E12-A6B)
  • 4 (for HB52E649E12-B6B)
• Byte Control: Managed via DQMB (Data Mask Byte) signals.
• Refresh Cycles: 8192 refresh cycles every 64 ms.
• Refresh Modes: Supports auto-refresh and self-refresh.

Applications

The HB52E649E12 is ideal for applications requiring high-density, high-performance memory solutions, including:

• Enterprise servers and workstations
• Data center infrastructure
• High-performance computing (HPC) systems
• Networking equipment such as routers and switches
• Industrial computing systems requiring reliable ECC memory

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (V_DD): -0.5 V to +4.6 V
• Input Voltage (V_IN): -0.5 V to V_DD + 0.5 V
• Operating Temperature: 0°C to +70°C (commercial grade)
• Storage Temperature: -55°C to +125°C

Recommended Operating Conditions

• Supply Voltage (V_DD): 3.3 V ± 0.3 V
• Clock Frequency: Up to 100 MHz
• CAS Latency: Programmable as per variant (3/4 or 4)

Timing Parameters

• t_CK (Clock Cycle Time): 10 ns (for 100 MHz operation)
• t_RCD (RAS to CAS Delay): 20 ns
• t_RP (RAS Precharge Time): 20 ns
• t_AC (Access Time from Clock): 6 ns

Package Information

Mechanical Specifications

• Package Type: 168-pin socket type (dual lead-out)
• Dimensions: 133.37 mm (L) × 43.18 mm (H) × 4.00 mm (T)
• Lead Pitch: 1.27 mm
• Contact Pad: Gold-plated for reliable connectivity

Ordering Information

Pin Arrangement

The HB52E649E12 follows a standard 168-pin DIMM pinout configuration, with pins allocated for power, ground, address inputs, data I/O, and control signals. The dual lead-out design ensures robust electrical connections in socketed applications.